Datasheet > S1M/1

S1M/1

更新时间： 2024-09-23 22:53:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	88K
描述
DIODE GEN PURP 1KV 1A DO214AC

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中文翻译

获取价格

数据手册
替代型号

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S1M/1 数据手册

S1A, S1B, S1D, S1G, S1J, S1K, S1M

www.vishay.com

Vishay General Semiconductor

Surface-Mount Glass Passivated Rectifier

FEATURES

Available

• Low profile package

• Ideal for automated placement

• Glass passivated pellet chip junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

SMA (DO-214AC)

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

Anode

ADDITIONAL RESOURCES

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer,

automotive, and telecommunication.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMA (DO-214AC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant and

AEC-Q101 qualified

I_F(AV)

1.0 A

50 V, 100 V, 200 V, 400 V, 600 V,

800 V, 1000 V

V_RRM

I_FSM

40 A, 30 A

5 mJ

E_AS

I_R

V_F

1.0 μA, 5.0 μA

1.1 V

(“_X” denotes revision code e.g. A, B,.....)

T_Jmax.

150 °C

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3, M3, HE3, and HM3 suffix meets JESD 201 class 2

whisker test

Package

SMA (DO-214AC)

Single

Circuit configuration

Polarity: color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL S1A

S1B

S1D

S1G

S1J

S1K

S1M UNIT

Device marking code

Maximum recurrent peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

Maximum average forward rectified current (fig. 1)

100

1000

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Non-repetitive peak reverse avalanche energy

at 25 °C, I_AS= 1 A, L = 10 mH

E_AS

°C

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

Revision: 21-Feb-2020

Document Number: 88711

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

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S1M/1 替代型号

型号	品牌	替代类型	描述	数据表
S1M-E3/61T	VISHAY	功能相似	DIODE GEN PURP 1KV 1A DO214AC

与S1M/1相关器件

型号	品牌	获取价格	描述	数据表
S1M_NL	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, SMA, 2 PI
S1M0V023B0J8	SEIKO	获取价格	128K X 16 STANDARD SRAM, 85 ns, PBGA48, TFBGA-48
S1M0V043B0J8	SEIKO	获取价格	256KX16 STANDARD SRAM, 85ns, PBGA48, TFBGA-48
S1M0W026B0J1	SEIKO	获取价格	128KX16 STANDARD SRAM, 100ns, PBGA48, TFBGA-48
S1M0W026B0J7	SEIKO	获取价格	128KX16 STANDARD SRAM, 70ns, PBGA48, TFBGA-48
S1M0W045B0J3	SEIKO	获取价格	256KX16 STANDARD SRAM, 85ns, PBGA48, TFBGA-48
S1M0W046B0J1	SEIKO	获取价格	Standard SRAM, 256KX16, 100ns, CMOS, PBGA48, TFBGA-48
S1M0W046B0J7	SEIKO	获取价格	256KX16 STANDARD SRAM, 70ns, PBGA48, TFBGA-48
S1M-13	DIODES	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, PLASTIC, SMA, 2 PIN
S1M-13-F	DIODES	获取价格	1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER

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