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S1KGP-TP PDF预览

S1KGP-TP

更新时间: 2024-11-11 20:11:07
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 73K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

S1KGP-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AA
包装说明:PLASTIC, SMBJ, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.1
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:800 V表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

S1KGP-TP 数据手册

 浏览型号S1KGP-TP的Datasheet PDF文件第2页浏览型号S1KGP-TP的Datasheet PDF文件第3页 
S1AGP  
THRU  
S1MGP  
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
For Surface Mount Applications  
1 Amp  
Extremely Low Thermal Resistance  
Easy Pick And Place  
Glass Passivated  
Silicon Rectifier  
50 to 1000 Volts  
High Temp Soldering: 250°C for 10 Seconds At Terminals  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Maximum Ratings  
DO-214AA  
(SMBJ) (LEAD FRAME)  
Operating Temperature: -65°C to +150°C  
Storage Temperature: -65°C to +150°C  
Typical Thermal Resistance: 30°C/W Junction to Terminal  
A
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
B
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
C
S1AGP  
S1BGP  
S1DGP  
S1GGP  
S1JGP  
S1KGP  
S1MGP  
S1AGP  
S1BGP  
S1DGP  
S1GGP  
S1JGP  
S1KGP  
S1MGP  
35V  
70V  
100V  
200V  
100V  
200V  
F
H
140V  
280V  
420V  
560V  
700V  
400V  
600V  
400V  
600V  
D
G
800V  
1000V  
800V  
1000V  
E
DIMENSIONS  
INCHES  
MIN  
MM  
MIN  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIM  
A
MAX  
.185  
.155  
.012  
.060  
.220  
.103  
.087  
.008  
MAX  
4.70  
3.94  
0.31  
1..52  
5.59  
2.62  
2.21  
0.203  
NOTE  
.160  
.130  
.006  
.030  
.200  
.079  
.075  
.002  
4.06  
3.30  
0.15  
0.76  
5.08  
2.01  
1.91  
0.05  
Average Forward  
current  
IF(AV)  
1.0A  
TJ = 100°C  
B
C
D
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine,  
E
F
G
H
Maximum  
IFM = 1.0A;  
TJ = 25°C*  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
1.1V  
SUGGESTED SOLDER  
PAD LAYOUT  
0.106  
IR  
5µA  
TJ = 25°C  
100µA TJ = 125°C  
0.083”  
Typical Junction  
Capacitance  
CJ  
10pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
0.050”  
www.mccsemi.com  
Revision: 5  
2008/01/01  
1 of 3  

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