Datasheet > S1KB

S1KB

更新时间： 2024-11-26 14:53:47

品牌	Logo	应用领域
鲁光 - LGE		整流二极管普通整流二极管
页数	文件大小	规格书
2页	1150K
描述
普通整流二极管

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中文翻译

获取价格

技术参数
数据手册

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S1KB 技术参数

Case Style：	SMB	IF（A）：	1.0
Maximum recurrent peak reverse voltage：	800	Peak forward surge current：	30
Maximum instantaneous forward voltage：	1.1	@IVA(A)：	1.0
Maximum reverse current：	5.0	TRR(nS)：	/
class：	Diodes

S1KB 数据手册

S1AB - S1MB

1.0 AMP. Surface Mount Rectifiers

Features

ꢀ

For surface mounted application

SMB/DO-214AA

Glass passivated junction chip.

Low forward voltage drop

0.180(4.57)

0.160(4.06)

High current capability

Easy pick and place

High surge current capability

Plastic material used carries Underwriters

Laboratory Classification 94V-0

High temperature soldering:

0.086(2.20)

0.077(1.95)

0.155(3.94)

0.130(3.30)

ꢀ

0.209(5.30)

0.201(5.10)

260 C / 10 seconds at terminals

0.012(0.30)

0.006(0.15)

Mechanical Data

0.096(2.44)

0.084(2.13)

ꢀ

Case: Molded plastic

Terminals: Pure tin plated, lead free.

Polarity: Indicated by cathode band

Weight: 0.093 gram

0.059(1.50)

0.035(0.90)

0.008(0.20)

0.002(0.05)

Marking Information

Dimensions in inches and(millimeters)

LGE：Lu Guang Electronic

XXXX：marking code (S1A-S1M)

XXXX

Maximum Ratings and Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

AB BB DB GB JB KB MB

50 100 200 400 600 800 1000

Type Number

Symbol

Units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

35 70 140 280 420 560 700

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

50 100 200 400 600 800 1000

1.0

I_(AV)

Current @T_L=110 C

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

I_FSM

Maximum Instantaneous Forward Voltage

@ 1.0A

V_F

I_R

1.1

Maximum DC Reverse Current @ T_A=25 C

at Rated DC Blocking Voltage @ T_A=125 C

Typical Junction Capacitance ( Note 1 )

Typical Thermal Resistance ( Note 2 )

Operating Temperature Range

R_θJL

T_J

C/W

-55 to +150

Storage Temperature Range

T^STG

1. Measured at 1 MHz and Applied V =4.0 Volts

Notes:

2. Measured on P.C. Board with 0.27” x 0.27” (7.0mm x 7.0mm) Copper Pad Areas.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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与S1KB相关器件

型号	品牌	获取价格	描述	数据表
S1KB-13	DIODES	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, PLASTIC, SMB, 2 PIN
S1KB-13-F-7	DIODES	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, GREEN, PLASTIC, SMB, 2 PIN
S1KB-7	DIODES	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, PLASTIC, SMB, 2 PIN
S1KBF	HOTTECH	获取价格	SMBF
S1KB-G	WEITRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM),
S1KB-GT3	SENSITRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN
S1KB-T3	SENSITRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN
S1K-E3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM),
S1K-E3/5AT	VISHAY	获取价格	DIODE GEN PURP 800V 1A DO214AC
S1K-E3/61T	VISHAY	获取价格	Diode Switching 800V 1A 2-Pin SMA T/R

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