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S1K-E3

更新时间: 2024-02-21 13:54:32
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 344K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM),

S1K-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.8
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 V最大非重复峰值正向电流:30 A
元件数量:1最高工作温度:150 °C
最大输出电流:1 A最大重复峰值反向电压:800 V
子类别:Rectifier Diodes表面贴装:YES
Base Number Matches:1

S1K-E3 数据手册

 浏览型号S1K-E3的Datasheet PDF文件第2页浏览型号S1K-E3的Datasheet PDF文件第3页浏览型号S1K-E3的Datasheet PDF文件第4页 
S1A thru S1M  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
1.0 A  
50 V to 1000 V  
40 A, 30 A  
1.0 µA, 5.0 µA  
1.1 V  
VF  
Tj max.  
150 °C  
DO-214AC (SMA)  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AC (SMA)  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High forward surge capability  
Polarity: Color band denotes cathode end  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
for consumer, automotive and Telecommunication  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol  
S1A  
SA  
50  
S1B  
SB  
S1D  
SD  
S1G  
SG  
S1J  
SJ  
S1K  
SK  
S1M  
SM  
Unit  
Device marking code  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
200  
400  
600  
800  
1000  
V
V
V
A
A
35  
50  
70  
140  
200  
280  
400  
1.0  
420  
600  
560  
800  
700  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current (see fig.1)  
IF(AV)  
IFSM  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
40  
30  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88711  
06-Sep-05  
www.vishay.com  
1

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