Datasheet > S1GF

S1GF

更新时间： 2023-12-06 20:00:23

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	207K
描述
快恢复整流管

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中文翻译

获取价格

数据手册

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S1GF 数据手册

S1AF THRU S1MF

Surface Mount General Purpose Silicon Rectifiers

Reverse Voltage - 50 to 1000 V

Forward Current - 1 A

PINNING

Features

DESCRIPTION

Cathode

• Glass Passivated Chip Junction

• For surface mount applications

• Low profile package

Anode

• Easy pick and place

Mechanical Data

Top view

Plastic Package : SMAF

• Case: SMAF

• Polarity: Color band denotes cathode end

• Terminals: Solderable per MIL-STD-750, method 2026

Maximum Ratings and Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load,

for capacitive load current derate by 20%.

Symbols S1AF S1BF S1DF S1GF S1JF S1KF S1MF Units

Parameter

Marking S1A S1B S1D S1G S1J S1K S1M

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100 200 400 600 800 1000

70 140 280 420 560 700

100 200 400 600 800 1000

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

at T_C= 125°Ϲ

I_F(AV)

Peak Forward Surge Current 8.3 ms Single half sine-

wave Superimposed on Rated Load (JEDEC Method)

I_FSM

V_F

I_R

Maximum Forward Voltage at 1 A

1.1

Maximum DC Reverse Current

at Rated DC Blocking Voltage

T_a= 25°Ϲ

T_a= 125°Ϲ

μA

Typical Junction Capacitance

at V_R= 4 V, f = 1 MHz

C_J

I²t

Rating for Fusing (t < 8.3 ms)

A²S

°Ϲ/W

°Ϲ

3.7

Typical Thermal Resistance from Junction to Case ¹⁾

Typical Thermal Resistance from Junction to Lead ¹⁾

R_

Typical Thermal Resistance from Junction to Ambient ¹⁾

R_

Operating and Storage Temperature Range

T_j, T_stg

- 55 to + 150

¹⁾P.C.B. mounted with 0.2 X 0.2" ( 5 X 5 mm) copper pad areas.

1 / 3

Dated: 05/09/2022 JD Rev: 07

12 3

中文翻译

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