Datasheet > S1F75510M0A0

S1F75510M0A0

更新时间： 2024-02-07 05:53:54

品牌	Logo	应用领域
精工 - SEIKO		光电二极管
页数	文件大小	规格书
21页	170K
描述
SWITCHED CAPACITOR REGULATOR, PDSO24, SSOP3-24

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S1F75510M0A0 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	SOIC	包装说明：	LSSOP, TSSOP24,.3
针数：	24	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
风险等级：	5.83	模拟集成电路 - 其他类型：	SWITCHED CAPACITOR REGULATOR
最大输入电压：	3.6 V	最小输入电压：	2.7 V
标称输入电压：	3 V	JESD-30 代码：	R-PDSO-G24
JESD-609代码：	e6	长度：	7.9 mm
功能数量：	1	端子数量：	24
最高工作温度：	85 °C	最低工作温度：	-30 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	LSSOP
封装等效代码：	TSSOP24,.3	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	峰值回流温度（摄氏度）：	260
电源：	3 V	认证状态：	Not Qualified
座面最大高度：	1.25 mm	子类别：	Switching Regulator or Controllers
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
切换器配置：	DOUBLER INVERTER	技术：	CMOS
温度等级：	OTHER	端子面层：	Tin/Bismuth (Sn/Bi)
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	5.6 mm	Base Number Matches：	1

S1F75510M0A0 数据手册

PF1233-03

S1F75510

Charge-pump DC/DC Converter &

Voltage Regulator

ꢀ DESCRIPTION

The S1F75510 is a power IC designed for use with medium or small capacity TFT–LCD panel modules.

A single chip of this IC is capable of generating three different levels of positive and negative output voltages

simultaneously, which are necessary to drive the LCD, by use of a single input power of +2.7 through +3.6V.

Since the S1F75510 does not require external transistors nor diodes as its voltage conversion circuit, its built-

in CMOS transistors constituting a complete charge pump type DC/DC converter, it is most suitable for the

purpose of reducing the current consumption levels of the LCD modules.

Moreover, the charge pump type DC/DC converter of the S1F75510 can be operated upon the frequencies,

which are to be switched over by the mode changing signals, using either of the built-in clock signals or external

clock signals optimal to respective cases.

This function can drastically suppress the current consumption of this IC while under light load state, thus

exhibiting very high power conversion efficiencies.

ꢀ FEATURES

ꢀ Supply voltage ························································································2.7V to 3.6V single power input

ꢀ Self consumption current (normal mode/blank mode) ····························200µA / 17µA (TBD)

Normal mode: Boosting by use of the internal clock

Blank mode: Selectable between boosting by use of the internal clock or by use of the external clock.

ꢀ Conversion efficiency of the charge pump part simple substance ··········95% or more respectively

ꢀ Whole conversion efficiency

• 2.7V at the time of an input 91%

• 3.0V at the time of an input 82%

ꢀ Built-in voltage conversion circuits constituted by charge pump type DC/DC converter,

• ꢀ2 boosting circuit in the positive direction

• ꢀ3 boosting circuit in the positive direction

• ꢀ3 boosting circuit in the negative direction

ꢀ Built-in voltage stabilizing circuit

ꢀ Capable of outputting the positive supply voltage VOUT2 for the source driver

• ꢀ2 boosting circuit in the positive direction + voltage stabilizing circuit

Output voltage: +5.0V

Output current: 14mA *Refer to “Mode changeover circuit ”

ꢀ Capable of outputting the positive supply voltage VOUT3 for the gate driver

• ꢀ3 boosting circuit in the positive direction

Output voltage: +15V

Output impedance: RVOUT3 = 0.7kΩ

VOUT3 = (VOUT2 ꢀ 3) – (RVOUT3 ꢀ IOUT3)

ꢀ Capable of outputting the negative supply voltage VOUT4 for the gate driver

• ꢀ3 boosting circuit in the negative direction

Output voltage: –10V

Output impedance: RVOUT4 = 1kΩ

VOUT4 = (VOUT2 ꢀ –2) – (RVOUT4 ꢀ IOUT4)

Rev. 1.1

12 3 4 5 6 7...21

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