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S16C150A PDF预览

S16C150A

更新时间: 2024-09-25 01:23:07
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THINKISEMI /
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2页 641K
描述
16.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers

S16C150A 数据手册

 浏览型号S16C150A的Datasheet PDF文件第2页 
S16C20A thru S16C150A  
®
S16C20A thru S16C150A  
Pb Free Plating Product  
16.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers  
Unit : inch (mm)  
TO-220AB  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
Standard MBR matured technology with high reliablity  
Low forward voltage drop  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters/Solar Inverters  
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
.1(2.54)  
.1(2.54)  
Case: Heatsink TO-220AB open type  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
Polarity: As marked on diode body  
Mounting position: Any  
method 208  
Case  
Case  
Case  
Case  
Doubler  
Series  
Negative  
Positive  
Weight: 2.0 gram approximately  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "D" Suffix "S"  
Suffix "C"  
Suffix "A"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
S16C S16C S16C S16C S16C S16C S16C S16C  
PARAMETER  
SYMBOL  
UNIT  
20A  
20  
30A  
30  
40A  
40  
50A  
50  
60A  
60  
90A 100A 150A  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
90  
63  
90  
100  
150  
105  
150  
V
V
V
A
14  
21  
28  
35  
42  
70  
Maximum DC blocking voltage  
20  
30  
40  
50  
60  
100  
Maximum average forward rectified current  
IF(AV)  
16  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
170  
A
V
Maximum instantaneous forward voltage (Note 1)  
IF= 8 A  
VF  
0.55  
15  
0.70  
0.90  
1.05  
0.5  
0.1  
5
Maximum reverse current @ rated VR TJ=25  
TJ=100℃  
IR  
mA  
10  
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
2.5  
dV/dt  
RθJC  
TJ  
V/μs  
/W  
Operating junction temperature range  
Storage temperature range  
- 55 to +125  
- 55 to +150  
TSTG  
- 55 to +150  
Note 1: Pulse test with PW=300μs, 1% duty cycle  
Rev.07C  
© 2006 Thinki Semiconductor Co., Ltd.  
Page 1/2  
http://www.thinkisemi.com/  

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