Datasheet > S1625NH

S1625NH

更新时间： 2024-10-13 22:43:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
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5页	63K
描述
The S16xxxH series of SCRs uses a high performance MESA GLASS PNPN technology.

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数据手册

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S1625NH 数据手册

S16xxxH

SCR

FEATURES

I_T(RMS)= 16A

V_DRM= 200V to 800V

High surge current capability

DESCRIPTION

The S16xxxH series of SCRs uses a high

performance MESA GLASS PNPN technology.

These parts are intended for general purpose

applications.

TO220

non-insulated

(Plastic)

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

I_T(RMS)

RMS on-state current

Tc= 90°C

(180° conductionangle)

I_T(AV)

I_TSM

Average on-state current

(180° conductionangle)

Non repetitive surge peak on-state current

(T initial = 25°C )

tp = 8.3 ms

tp = 10 ms

175

160

128

100

I²t

A²s

I²t Value for fusing

Critical rate of rise of on-state current

dI/dt

A/µs

I_G= 100 mA

di_G/dt = 1 A/µs.

Storage and operating junction temperature range

T_stg

T_j

- 40, + 150

- 40, + 125

°C

Maximum lead temperature for soldering during 10s at

4.5mm from case

260

Voltage

Symbol

Parameter

Unit

V_DRM

V_RRM

Repetitive peak off-state voltage

T_j= 125°C

200

400

600

800

Januaryr 1995

1/5

12 3 4 5

中文翻译

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