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S120F4 PDF预览

S120F4

更新时间: 2024-01-07 09:24:11
品牌 Logo 应用领域
扬杰 - YANGJIE 瞄准线光电二极管
页数 文件大小 规格书
4页 460K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 200V V(RRM), Silicon,

S120F4 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PDSO-F2Reach Compliance Code:unknown
风险等级:5.66其他特性:FREE WHEELING DIODE,LOW POWER LOSS
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:200 V
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

S120F4 数据手册

 浏览型号S120F4的Datasheet PDF文件第2页浏览型号S120F4的Datasheet PDF文件第3页浏览型号S120F4的Datasheet PDF文件第4页 
RoHS  
S12 THRU S120  
COMPLIANT  
Surface Mount Schottky Rectifier  
Features  
Low profile package  
Ideal for automated placement  
Guardring for overvoltage protection  
Low power losses, high efficiency  
● High forward surge capability  
Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
Mechanical Date  
ackage SOD-123FL  
:
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
P
Terminals Tin plated leads, solderable per  
:
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified)  
Maximum Ratings  
a
S115  
S115  
150  
PARAMETER  
SYMBOL UNIT  
S12  
S12  
20  
S13  
S13  
30  
S14  
S14  
40  
S15  
S15  
50  
S16  
S16  
60  
S18  
S18  
80  
S110  
S110  
100  
S120  
S120  
200  
Device marking code  
V
RRM  
V
A
Repetitive peak reverse voltage  
Average rectified output current  
@60Hz sine wave, Resistance load,  
Ta (FIG.1)  
I
1.0  
O
Surge(non-repetitive)forward current  
@60Hz half-sine wave,1 cycle, Tj=25  
I
A
30  
FSM  
T
-55 ~+150  
Storage temperature  
Junction temperature  
stg  
T
j
-55 ~+125  
-55 ~+150  
(T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
PARAMETER  
SYMBOL  
S12  
S13  
S14  
S15  
S16  
S18  
S110  
S115  
S120  
UNIT  
Maximum instantaneous  
forward voltage drop per diode  
V
F
I
=1.0A  
FM  
V
0.50  
0.70  
0.85  
0.90  
T =25  
0.50  
10  
0.10  
a
Maximum DC reverse current  
at rated DC blocking voltage  
per diode @ VRM=VRRM  
I
mA  
RRM  
5
T =100℃  
a
1 / 4  
S-S080  
Rev. 2.4, 28-Apr-14  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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