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S1133

更新时间: 2024-11-29 22:23:03
品牌 Logo 应用领域
HAMAMATSU 光电光电器件二极管光电二极管PC
页数 文件大小 规格书
4页 153K
描述
Si photodiode

S1133 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownHTS代码:8541.40.60.50
风险等级:5.54Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:1404632
Samacsys Pin Count:2Samacsys Part Category:Diode
Samacsys Package Category:OtherSamacsys Footprint Name:S1133-2
Samacsys Released Date:2018-11-28 19:25:50Is Samacsys:N
配置:SINGLE最大暗电源:0.01 nA
红外线范围:NO标称光电流:0.00065 mA
功能数量:1最高工作温度:60 °C
最低工作温度:-10 °C峰值波长:560 nm
最小反向击穿电压:10 V形状:RECTANGULAR
Base Number Matches:1

S1133 数据手册

 浏览型号S1133的Datasheet PDF文件第2页浏览型号S1133的Datasheet PDF文件第3页浏览型号S1133的Datasheet PDF文件第4页 
P H O T O D I O D E  
Si photodiode  
S1087/S1133 series  
Ceramic package photodiode with low dark current  
S1087/S1133 series are ceramic package photodiodes that offer low dark current. Ceramic package used is light-impervious, so no stray light can  
reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide  
dynamic range from low light levels to high light levels.  
Features  
Applications  
S1087, S1133  
S1087-01, S1133-01: For visible to IR range  
S1133-14 : For visible to near IR range  
: For visible range  
Exposure meter  
Illuminometer  
Camera auto exposure  
Stroboscope light control  
Copier  
Display light control  
Optical switch  
General ratings / Absolute maximum ratings  
Absolute maximum ratings  
Dimensional  
Active  
area size  
Effective  
active area  
Reverse  
voltage  
VR Max.  
(V)  
Operating  
temperature  
Topr  
Storage  
temperature  
Tstg  
outline/  
Window  
Type No.  
material *  
(mm)  
(mm2)  
1.6  
(°C)  
(°C)  
S1087  
S1087-01  
S1133  
/V  
/R  
/V  
1.3 × 1.3  
10  
-10 to +60  
-20 to +70  
S1133-01  
S1133-14  
2.4 × 2.8  
6.6  
/R  
* Window material R: resin coating, V: visual-compensation filter  
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)  
Photo sensitivity  
S
(A/W)  
Rise  
time  
tr  
Short  
Dark  
Infrared circuit Temp. current  
Terminal  
Spectral Peak  
response sensitivity  
range wavelength  
Temp.  
coefficient  
of ID  
Shunt  
resistance  
Rsh  
capacitance  
Ct  
VR=0 V  
f=10 kHz  
current  
Isc  
100 lx  
ID  
sensitivity  
ratio  
coefficient  
of Isc  
VR=0 V  
GaP He-Ne  
LED laser  
VR=1 V  
Max.  
Type No.  
TCID  
VR=10 mV  
λ
λp  
λp  
RL=1 k  
Min. Typ.  
(G) (G)  
560 nm 633 nm  
(nm)  
(nm)  
(%)  
10  
-
(µA) (%/°C) (pA) (times/°C) (µs)  
0.16 -0.01  
0.5  
(pF)  
200  
S1087  
S1087-01  
S1133  
320 to 730 560  
320 to 1100 960  
320 to 730 560  
320 to 1100 960  
320 to 1000 720  
0.3  
0.58  
0.3  
0.3  
0.33  
0.3  
0.19  
0.38  
0.19  
0.38  
0.37  
250  
1.3  
0.1  
0.65 -0.01  
10  
20  
10  
-
1.12  
10  
2.5  
0.5  
700  
200  
100  
S1133-01  
S1133-14  
0.58  
0.4  
5.6  
0.1  
3.4  
0.33  
-
50  

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