S1133-01

更新时间： 2024-11-29 22:13:23

品牌	Logo	应用领域
HAMAMATSU		光电二极管光电二极管
页数	文件大小	规格书
4页	153K
描述
Si photodiode

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中文翻译

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技术参数
数据手册

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S1133-01 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	HTS代码：	8541.40.60.50
风险等级：	5.55	Is Samacsys：	N
配置：	SINGLE	最大暗电源：	0.01 nA
红外线范围：	YES	标称光电流：	0.0056 mA
功能数量：	1	最高工作温度：	60 °C
最低工作温度：	-10 °C	峰值波长：	960 nm
最小反向击穿电压：	10 V	形状：	RECTANGULAR
Base Number Matches：	1

S1133-01 数据手册

P H O T O D I O D E

Si photodiode

S1087/S1133 series

Ceramic package photodiode with low dark current

S1087/S1133 series are ceramic package photodiodes that offer low dark current. Ceramic package used is light-impervious, so no stray light can

reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide

dynamic range from low light levels to high light levels.

Features

Applications

S1087, S1133

S1087-01, S1133-01: For visible to IR range

S1133-14 : For visible to near IR range

: For visible range

Exposure meter

Illuminometer

Camera auto exposure

Stroboscope light control

Copier

Display light control

Optical switch

ꢀ General ratings / Absolute maximum ratings

Absolute maximum ratings

Dimensional

Active

area size

Effective

active area

Reverse

voltage

VR Max.

(V)

Operating

temperature

Topr

Storage

temperature

Tstg

outline/

Window

Type No.

material *

(mm)

(mm²)

1.6

(°C)

S1087

S1087-01

S1133

ꢀ/V

ꢀ/R

ꢀ/V

1.3 × 1.3

-10 to +60

-20 to +70

S1133-01

S1133-14

2.4 × 2.8

6.6

ꢀ/R

* Window material R: resin coating, V: visual-compensation filter

ꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Photo sensitivity

(A/W)

Rise

time

Short

Dark

Infrared circuit Temp. current

Terminal

Spectral Peak

response sensitivity

range wavelength

Temp.

coefficient

of ID

Shunt

resistance

Rsh

capacitance

VR=0 V

f=10 kHz

current

Isc

100 lx

I_D

sensitivity

ratio

coefficient

of Isc

VR=0 V

GaP He-Ne

LED laser

VR=1 V

Max.

Type No.

TCID

VR=10 mV

λp

RL=1 k

Ω

Min. Typ.

(GΩ) (GΩ)

560 nm 633 nm

(nm)

(%)

(µA) (%/°C) (pA) (times/°C) (µs)

0.16 -0.01

0.5

(pF)

200

S1087

S1087-01

S1133

320 to 730 560

320 to 1100 960

320 to 730 560

320 to 1100 960

320 to 1000 720

0.3

0.58

0.3

0.33

0.3

0.19

0.38

0.19

0.38

0.37

250

1.3

0.1

0.65 -0.01

1.12

2.5

0.5

700

200

100

S1133-01

S1133-14

0.58

0.4

5.6

0.1

3.4

0.33

12 3 4

中文翻译

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与S1133-01相关器件

型号	品牌	获取价格	描述	数据表
S1133-02	HAMAMATSU	获取价格	Optoelectronic Device
S1133-05	HAMAMATSU	获取价格	Optoelectronic Device
S1133-11	HAMAMATSU	获取价格	Optoelectronic Device
S1133-12	HAMAMATSU	获取价格	Optoelectronic Device
S1133-14	HAMAMATSU	获取价格	Si photodiode
S-1133B00-I8T1G	SII	获取价格	HIGH RIPPLE-REJECTION AND LOW DROPOUT MIDDLE-OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1133B00-I8T1U	ABLIC	获取价格	HIGH RIPPLE-REJECTION AND LOW DROPOUT MIDDLE-OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1133B00-U5T1G	SII	获取价格	HIGH RIPPLE-REJECTION AND LOW DROPOUT MIDDLE-OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1133B00-U5T1X	ABLIC	获取价格	HIGH RIPPLE-REJECTION AND LOW DROPOUT MIDDLE-OUTPUT CURRENT CMOS VOLTAGE REGULATOR
S-1133B12-I8T1G	SII	获取价格	HIGH RIPPLE-REJECTION AND LOW DROPOUT MIDDLE-OUTPUT CURRENT CMOS VOLTAGE REGULATOR

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