S110-T3

更新时间： 2024-11-14 22:23:03

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
3页	44K
描述
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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S110-T3 数据手册

WTE

PO WER SEMICONDUCTORS

SK12 – S110

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

Surge Overload Rating to 30A Peak

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMB/DO-214AA

Min

Mechanical Data

Dim

Max

3.94

4.70

2.11

Case: Low Profile Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

3.30

4.06

1.91

0.152

5.08

0.305

5.59

2.44

0.203

1.27

Weight: 0.093 grams (approx.)

2.13

0.051

0.76

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol SK12 SK13 SK14 SK15 SK16 SK18 SK19 S110 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_L= 75°C

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

0.55

0.70

0.85

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 100°C

@T_A= 25°C

0.5

Typical Thermal Resistance Junction to Ambient

(Note 1)

R^ꢀ^JA

K/W

Operating Temperature Range

Storage Temperature Range

T^j

-65 to +125

-65 to +150

°C

T^STG

Note: 1. Mounted on P.C. Board with 5.0mm²copper pad areas

SK12 – S110

1 of 3

12 3

中文翻译

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