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S10355-01_15

更新时间： 2024-10-09 01:26:15
品牌 Logo 应用领域
HAMAMATSU /
页数 文件大小 规格书
4页 152K
描述
Si photodiodes

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中文翻译

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S10355-01_15 数据手册

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Si photodiodes  
S10355-01  
S10356-01  
Back-illuminated type photodiodes employing  
CSP structure  
The S10355-01 and S10356-01 are back-illuminated type photodiodes designed to minimize the dead areas at the device  
edges by using a CSP (chip size package) structure. The CSP also allows using multiple devices in a tiled format.  
Features  
Applications  
Allows multiple devices to be arranged in a tiled format  
Tiled format minimizes the dead area between photo-  
diodes and covers a large detection area.  
General industrial mesurement  
X-ray inspection system  
Patterned electrodes for signal readout terminals  
Lead pins and solder balls are available as signal read-  
out terminals on the underside of the package.  
Please contact us for details.  
Easy coupling to scintillator  
Maximizes the optical coupling efficiency to a scintil-  
lator since no wire leads exist on the photosensitive  
surface, making these photodiodes ideal as detectors  
for X-ray non-destructive inspection systems.  
Structure  
Parameter  
Package size  
Chip size  
S10355-01  
7.52 × 7.52  
7.37 × 7.37  
6.97 × 6.97  
S10356-01  
3 × 3  
2.8 × 2.8  
2.5 × 2.5  
Unit  
mm  
mm  
mm  
Photosensitive area  
Absolute maximum ratings  
Parameter  
Reverse voltage  
Operating temperature  
Storage temperature  
Symbol  
VR max  
Topr  
Tstg  
Tsol  
Condition  
Ta=25 °C  
Value  
10  
-20 to +60  
Unit  
V
°C  
°C  
-
-20 to +80  
Reflow soldering condition*  
Peak temperature 240 °C (see page 3)  
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the  
product within the absolute maximum ratings.  
* JEDEC level 5a  
Electrical and optical characteristics (Ta=25 °C)  
S10355-01  
Typ.  
S10356-01  
Typ.  
Parameter  
Symbol  
Condition  
Unit  
Min.  
Max.  
Min.  
Max.  
Spectral response range  
Peak sensitivity wavelength  
λ
λp  
400 to 1100  
960  
400 to 1100  
960  
nm  
nm  
A/W  
A/W  
μA  
-
-
-
-
-
1
-
0.55  
0.35  
4
-
-
-
-
0.3  
λ=960 nm  
λ=540 nm  
100 lx, 2856 K  
VR=10 mV  
0.55  
0.35  
30  
0.59  
0.37  
40  
0.1  
0.59  
0.37  
5
0.01  
Photo sensitivity  
S
Short circuit current  
Dark current  
Isc  
ID  
-
-
nA  
VR=0 V, RL=1 kΩ  
λ=650 nm  
VR=0 V, f=10 kHz  
Rise time  
tr  
-
-
20  
-
-
-
15  
60  
-
μs  
Terminal capacitance  
Ct  
500  
700  
90  
pF  
1
www.hamamatsu.com  
1234

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