Datasheet > S10044

S10044

更新时间： 2024-11-11 20:10:47

品牌	Logo	应用领域
HAMAMATSU		光电
页数	文件大小	规格书
2页	54K
描述
PIN Photodiode, CERAMIC, SURFACE MOUNT PACKAGE-10

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技术参数
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S10044 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	CERAMIC, SURFACE MOUNT PACKAGE-10	Reach Compliance Code：	unknown
HTS代码：	8541.40.60.50	风险等级：	5.84
其他特性：	HIGH RELIABILITY	配置：	SINGLE
最大暗电源：	5 nA	红外线范围：	YES
功能数量：	1	最高工作温度：	100 °C
最低工作温度：	-40 °C	光电设备类型：	PIN PHOTODIODE
峰值波长：	960 nm	形状：	RECTANGULAR
尺寸：	5 mm	Base Number Matches：	1

S10044 数据手册

P H O T O D I O D E

Si PIN Photodiode

S10044

For monitoring high-power red/infrared laser diode, surface mount type

S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its

active area has a specially processed surface structure that maintains good photocurrent linearity up to an incident light level 10 times

higher than that handled with the conventional product (S5106). S10044 is in a surface mount package suitable for solder reflow process,

allowing automated PCB production. HAMAMATSU also provides a high-reliability metal package Si photodiode (S10045) for high-power

violet laser diodes.

Features

Applications

High linearity: 10 times as compared with the

conventional type (S5106)

Aging equipment monitor for red/infrared semiconductor

laser diodes

Large active area: 5 × 5 mm

Surface mount ceramic chip carrier package

ꢀ Absolute maximum ratings (Ta=25 °C)

Parameter

Reverse voltage

Operating temperature

Storage temperature

Symbol

VR Max.

Topr

Value

-40 to +100

-40 to +125

Unit

°C

Tstg

ꢀ Electrical and optical characteristics (Ta=25 °C)

Parameter

Spectral response range

Peak sensitivity wavelength

Photo sensitivity

Symbol

Condition

Min.

Typ.

320 to 1100

Max.

Unit

mA/W

λp

960

0.4

λ=780 nm

Dark current

Terminal capacitance

VR=10 V

VR=10 V, f=1 MHz

VR=10 V, RL=50 Ω

-3 dB

Cut-off frequency

MHz

Note) For mass production, order unit is 100 pieces.

Do not expose these photodiodes to high temperatures above 250 ºC. Failure to follow this instruction adversely affects

photodiode characteristics.

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