LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package.
LX8050PLT1G
Series
S-LX8050PLT1G
Series
IC = 0.5A.
ƽEpitaxial planar type.
3
ƽNPN complement: LX8050
ƽPb-Free Package is available.
1
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
2
DEVICE MARKING AND ORDERING INFORMATION
SOT–23
Shipping
Device
Marking
COLLECTOR
3
(S-)LX8050PLT1G
3000/Tape&Reel
X8A
(S-)LX8050PLT3G
(S-)LX8050QLT1G
(S-)LX8050QLT3G
(S-)LX8050RLT1G
(S-)LX8050RLT3G
10000/Tape&Reel
3000/Tape&Reel
X8A
X8C
X8C
X8E
X8E
X8G
X8G
1
BASE
2
10000/Tape&Reel
3000/Tape&Reel
EMITTER
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
(S-)LX8050SLT1G
(S-)LX8050SLT3G
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
VCEO
VCBO
VEBO
25
40
5
V
V
V
Collector Current-continuoun
I
C
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
P
D
T
A
=25°C
225
1.8
mW
Derate above 25°C
mW/°C
Thermal Resistance,Junction to Ambient
RθJ A
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
RθJ A
417
°C/W
°C
T
j,
T
S
t
g
-55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/4