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S-LX8050SLT3G PDF预览

S-LX8050SLT3G

更新时间: 2024-11-17 02:49:15
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
4页 69K
描述
General Purpose Transistors NPN Silicon

S-LX8050SLT3G 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.72
Base Number Matches:1

S-LX8050SLT3G 数据手册

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LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
NPN Silicon  
FEATURE  
ƽHigh current capacity in compact package.  
LX8050PLT1G  
Series  
S-LX8050PLT1G  
Series  
IC = 0.5A.  
ƽEpitaxial planar type.  
3
ƽNPN complement: LX8050  
ƽPb-Free Package is available.  
1
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and  
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  
2
DEVICE MARKING AND ORDERING INFORMATION  
SOT–23  
Shipping  
Device  
Marking  
COLLECTOR  
3
(S-)LX8050PLT1G  
3000/Tape&Reel  
X8A  
(S-)LX8050PLT3G  
(S-)LX8050QLT1G  
(S-)LX8050QLT3G  
(S-)LX8050RLT1G  
(S-)LX8050RLT3G  
10000/Tape&Reel  
3000/Tape&Reel  
X8A  
X8C  
X8C  
X8E  
X8E  
X8G  
X8G  
1
BASE  
2
10000/Tape&Reel  
3000/Tape&Reel  
EMITTER  
10000/Tape&Reel  
3000/Tape&Reel  
10000/Tape&Reel  
(S-)LX8050SLT1G  
(S-)LX8050SLT3G  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
VCEO  
VCBO  
VEBO  
25  
40  
5
V
V
V
Collector Current-continuoun  
I
C
500  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board,(1)  
P
D
T
A
=25°C  
225  
1.8  
mW  
Derate above 25°C  
mW/°C  
Thermal Resistance,Junction to Ambient  
RθJ A  
556  
°C/W  
Total Device Dissipation  
Alumina Substrate,(2) TA=25°C  
Derate above 25°C  
P
D
300  
2.4  
mW  
mW/°C  
Thermal Resistance,Junction to Ambient  
Junction and Storage Temperature  
RθJ A  
417  
°C/W  
°C  
T
j,  
T
S
t
g
-55 to +150  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
Rev.O 1/4  

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