Datasheet > S-LSTZ5.6NLT3G

S-LSTZ5.6NLT3G

更新时间： 2024-10-29 01:15:59

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
3页	305K
描述
200mW SURFACE MOUNT ZENER DIODES

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中文翻译

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技术参数
数据手册

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S-LSTZ5.6NLT3G 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.79	二极管类型：	ZENER DIODE
Base Number Matches：	1

S-LSTZ5.6NLT3G 数据手册

LESHAN RADIO COMPANY, LTD.

200mW SURFACE MOUNT ZENER DIODES

LSTZ5.6NLT1G

S-LSTZ5.6NLT1G

FEATURES

z PLANAR DIE CONSTRUCTION

z 200mW POWER DISSIPATION

z IDEALLY SUITED FOR AUTOMATED

ASSEMBLY PROCESSES

We declare that the material of product

compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site and

Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

SOT– 23 (TO–236AB)

PLASTIC

MECHANICAL DATA

z CASE:MOLDED SOT-23

z TERMINALS:SOLDERABLE PER MIL-STD-202,

METHOD 208

z POLARITY:SEE DIAGRAM BELOW

z MOUNTING POSITION:ANY

ORDERING INFORMATION

Device

Marking

Z56

Shipping

LSTZ5.6NLT1G

S-LSTZ5.6NLT1G

3000/Tape&Reel

LSTZ5.6NLT3G

S-LSTZ5.6NLT3G

10000/Tape&Reel

Z56

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED

PARAMETER

SYMBOL

VALUE

UNITS

MAXIMUM POWER DISSIPATION AT 25°C

JUNCTION TEMPERATURE

P_D

T_J

200

150

°C

STORAGE TEMPERATURE RANGE

T_STG

-55to+150

°C

VALID PROVIDED THAT LEADS ATA DISTANCE OF 8mm FROM CASE ARE KEPTATAM BIENTTEM PERATURE

PARAMETER

SYMBOL

V_Z

STZ5.6N

UNITS

MIN.

5.31

MAX.

5.92

ZENER VOLTAGE

I_Z= 5mA

MAXIMUM DC REVERSE CURRENT

TA=25℃

V_R=2.5V

I_Z=5mA

I_R

1.0

μA

DYNAMIC IMPEDANCE

Z_Z

RISING OPERATION RESISTANCE

I_Z=0.5mA

f=1MHZ,

V_R=5V

Z_ZK

200

MAX 15

CAPACITANCE BETWEEN TERMINALS

C_T

Rev.O 1/3

12 3

中文翻译

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