Datasheet > S-LRB751BS-40T1G

S-LRB751BS-40T1G

更新时间： 2022-06-24 15:43:44

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	430K
描述
SCHOTTKY BARRIER DIODE

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S-LRB751BS-40T1G 数据手册

LESHAN RADIO COMPANY, LTD.

SCHOTTKYBARRIERDIODE

LRB751BS-40T5G

S-LRB751BS-40T5G

zApplications

Low current rectification

Features

Extremelysmall surface mounting type. (SOD882)

Low

High reliability.

We declare that the material of product

compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable.

SOD882

Construction

Silicon epitaxial planar

Anode

Cathode

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LRB751BS-40T1G

S-LRB751BS-40T1G

5000/Tape&Reel

LRB751BS-40T3G

8000/Tape&Reel

10000/Tape&Reel

S-LRB751BS-40T3G

LRB751BS-40T5G

S-LRB751BS-40T5G

zAbsolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current

Forward current surge peak （60Hz・1cyc）

Junction temperature

200

125

I_FSM

℃

Storage temperature

-40 to +125

Tstg

℃

zElectrical characteristic (Ta=25°C)

Parameter

Forward voltage

Conditions

Symbol

Min.

Typ.

Max.

0.37

0.5

Unit

V_F

I_R

I_F=1mA

Reverse current

V_R=30V

µA

Capacitance between terminals

V_R=1V , f=1MHz

Rev.B 1/3

12 3

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