Datasheet > S-LP9435LT1G

S-LP9435LT1G

更新时间： 2024-09-17 01:22:15

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
4页	416K
描述
30V P-Channel Enhancement-Mode MOSFET

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数据手册

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S-LP9435LT1G 数据手册

LESHAN RADIO COMPANY, LTD.

30V P-Channel Enhancement-Mode MOSFET

V_DS= -30V

LP9435LT1G

R_DS(ON), V_gs@-10V, I_ds@-5.3A = 70mΩ

R_DS(ON), V_gs@-4.5V, I_ds@-4.2A = 100mΩ

S-LP9435LT1G

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

Improved Shoot-Through FOM

SOT– 23 (TO–236AB)

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

▼ Simple Drive Requirement

▼ Small Package Outline

▼ Surface Mount Device

Ordering Information

Device

Marking

Shipping

LP9435LT1G

S-LP9435LT1G

P94

3000/Tape&Reel

LP9435LT3G

S-LP9435LT3G

10000/Tape&Reel

P94

Maximum Ratings and Thermal Characteristics (T_A= 25^oC unless otherwise noted)

Symbol

V_DS

Parameter

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_GS

I_D

± 20

-5.3

Pulsed Drain Current ¹⁾

I_DM

-20

TA = 25^oC

TA = 75^oC

1.4

P_D

Maximum Power Dissipation

0.8

^oC

T_J, T_stg

R_θJC

Operating Junction and Storage Temperature Range

-55 to 150

Junction-to-Case Thermal Resistance

^oC/W

Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾

R_θJA

Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature

2. 1-in²2oz Cu PCB board

3. Guaranteed by design; not subject to production testing

Rev .O 1/4

12 3 4

中文翻译

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