Datasheet > S-LP4101LT1G

S-LP4101LT1G

更新时间： 2024-09-29 01:22:15

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	1035K
描述
20V P-Channel Enhancement-Mode MOSFET

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中文翻译

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数据手册

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S-LP4101LT1G 数据手册

LESHAN RADIO COMPANY, LTD.

20V P-Channel Enhancement-Mode MOSFET

V_DS= -20V

LP4101LT1G

S-LP4101LT1G

_DS(ON),Vgs@-4.5V, Ids@-2.8A = 100 mΩ

mΩ

_DS(ON),Vgs@-2.5V, Ids@-2.0A = 150

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

Fully Characterized Avalanche Voltage and Current

Improved Shoot-Through FOM

we declare that the material of product

SOT– 23 (TO–236AB)

compliance with RoHS reuirements.

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

▼ Simple Drive Requirement

▼ Small Package Outline

▼ Surface Mount Device

Ordering Information

Device

Marking

Shipping

LP4101LT1G

S-LP4101LT1G

P41

3000/Tape & Reel

LP4101LT3G

S-LP4101LT3G

P41

10,000/Tape & Reel

Maximum Ratings and Thermal Characteristics (T_A= 25^oC unless otherwise noted)

Parameter

Symbol

V_DS

Limit

-20

± 8

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current 1)

V_GS

I_D

-2.3

-8

I_DM

TA = 25^oC

TA = 75^oC

0.9

P_D

Maximum Power Dissipation

0.57

Operating Junction and Storage Temperature Range

Junction-to-Case Thermal Resistance

T_J, T_stg

R_qJC

-55 to 150

^oC

^oC/W

Junction-to-Ambient Thermal Resistance (PCB mounted)

R_qJA

140

Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation

2. 1-in²2oz Cu PCB board

3. Guaranteed by design; not subject to production testing

Rev .O 1/5

12 3 4 5

中文翻译

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