Datasheet > S-LP2305DSLT3G

S-LP2305DSLT3G

更新时间： 2024-09-17 01:22:15

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	510K
描述
12V P-Channel Enhancement-Mode MOSFET

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中文翻译

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数据手册

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S-LP2305DSLT3G 数据手册

LESHAN RADIO COMPANY, LTD.

12V P-Channel Enhancement-Mode MOSFET

LP2305DSLT1G

S-LP2305DSLT1G

V_DS= -12V

R^DS(ON),Vgs@-4.5V, Ids@ 3.5A = 68

mΩ

_DS(ON),Vgs@-2.5V, Ids@ 3A = 81

R_DS(ON),

2A = 118 mΩ

Vgs@-1.8V, Ids@

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

Fully Characterized Avalanche Voltage and Current

SOT– 23 (TO–236AB)

Improved Shoot-Through FOM

we declare that the material of product

compliance with RoHS re uirements.

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

▼ Simple Drive Requirement

▼ Small Package Outline

▼ Surface Mount Device

Ordering Information

Device

Marking

P5S

Shipping

LP2305DSLT1G

S-LP2305DSLT1G

3000/Tape&Reel

LP2305DSLT3G

S-LP2305DSLT3G

10000/Tape&Reel

P5S

Maximum Ratings and Thermal Characteristics (T_A= 25^oC unless otherwise noted)

Parameter

Symbol

V_DS

Limit

- 12

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_GS

± 8

I_D

-4

Pulsed Drain Current ¹⁾

I_DM

-12

^oC

T_J, T_stg

Operating Junction and Storage Temperature Range

-55 to 150

Total Device Dissipation FR–5 Board T_A= 25°C

P_D

1100

Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature

Thermal Data

Symbol

Rthj-a

Parameter

Thermal Resistance Junction-ambient³

Value

110

Unit

℃/W

Rev .B 1/5

12 3 4 5

中文翻译

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