Datasheet > S-LN2312LT1G

S-LN2312LT1G

更新时间： 2024-09-18 01:20:07

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	695K
描述
20V N-Channel Enhancement-Mode MOSFET

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中文翻译

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数据手册

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S-LN2312LT1G 数据手册

LESHAN RADIO COMPANY, LTD.

20V N-Channel Enhancement-Mode MOSFET

V^DS= 20V

LN2312LT1G

S-LN2312LT1G

R^DS(ON),Vgs@4.5V, Ids@5.0A = 41mΩ

R^DS(ON),Vgs@2.5V, Ids@4.5A = 47m

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

we declare that the material of product

compliance with RoHS reuqirements.

SOT– 23 (TO–236AB)

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

▼ Capable of 2.5V gate drive

▼ Lower on-resistance

▼ Surface mount package

Ordering Information

Device

Marking

N12

Shipping

LN2312LT1G

S-LN2312LT1G

3000/Tape&Reel

LN2312LT3G

S-LN2312LT3G

10000/Tape&Reel

N12

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current³, V_GS@ 4.5V

Pulsed Drain Current^1,2

V_GS

±8

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

4.9

3.4

P_D@T_A=25℃

Total Power Dissipation

0.75

1.3

W/℃

℃

Linear Derating Factor

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

Thermal Data

Symbol

Rthj-a

Parameter

Thermal Resistance Junction-ambient³

Value

140

Unit

Max.

℃/W

Rev .O 1/5

12 3 4 5

中文翻译

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