Datasheet > S-LN2302BLT3G

S-LN2302BLT3G

更新时间： 2024-09-18 01:20:07

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	320K
描述
20V N-Channel Enhancement-Mode MOSFET

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中文翻译

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数据手册

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S-LN2302BLT3G 数据手册

LESHAN RADIO COMPANY, LTD.

20V N-Channel Enhancement-Mode MOSFET

FEATURES

● RDS(ON)≦85mΩ@VGS=4.5V

LN2302BLT1G

S-LN2302BLT1G

● RDS(ON)≦115mΩ@VGS=2.5V

● RDS(ON)≦135mΩ@VGS=1.8V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current

capability

● S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

SOT– 23

APPLICATIONS

● Power Management in Notebook

● Portable Equipment

● Load Switch

● DSC

Ordering Information

Device

Shipping

Marking

LN2302BLT1G

3000/Tape&Reel

02B

S-LN2302BLT1G

LN2302BLT3G

S-LN2302BLT3G

10000/Tape&Reel

02B

Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)

Parameter Symbol

Drain-Source Voltage

Limit

Unit

VDSS

GSS

Gate-Source Voltage

Continuous Drain

Current(tJ=150℃)

±8

=25℃

=70℃

2.8

2.2

Pulsed Drain Current

Maximum Body-Diode Continuous Current

1.6

1.25

0.8

150

=25℃

=70℃

Maximum Power Dissipation

℃

Operating Junction Temperature

Maximum Junction-to-Ambient

Thermal Resistance-Junction to Case

T≦10 sec

Steady State

℃/W

RthJA

105

RθJC

*The device mounted on 1in²FR4 board with 2 oz copper

Rev .O 1/5

12 3 4 5

中文翻译

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