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S-LDTD113ELT1G PDF预览

S-LDTD113ELT1G

更新时间： 2025-07-27 01:16:47
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
3页 378K
描述
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

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S-LDTD113ELT1G 数据手册

 浏览型号S-LDTD113ELT1G的Datasheet PDF文件第2页浏览型号S-LDTD113ELT1G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTD113ELT1G  
S-LDTD113ELT1G  
•
Applications  
Inverter, Interface, Driver  
• Features  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
3
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
1
2
SOT-23  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
•
•
We declare that the material of product compliance with  
RoHS requirements.  
S- Prefix for Automotive and Other Applications Requiring Unique Site  
3
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  
R1  
R2  
COLLECTOR  
1
zAbsolute maximum ratings (Ta=25°C)  
BASE  
2
Limits  
Parameter  
Symbol  
Unit  
EMITTER  
Supply voltage  
V
CC  
IN  
50  
−10 to +10  
500  
V
V
Input voltage  
V
Output current  
I
C
mA  
mW  
C
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
200  
150  
Tstg  
−55 to +150  
C
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
LDTD113ELT1G  
S-LDTD113ELT1G  
E4  
1
1
1
1
3000/Tape & Reel  
10000/Tape & Reel  
LDTD113ELT3G  
S-LDTD113ELT3G  
E4  
zElectrical characteristics (Ta=25°C)  
Parameter  
Input voltage  
Symbol Min.  
Typ.  
−
Max.  
0.5  
−
Unit  
V
Conditions  
V
V
I(off)  
−
3
−
−
−
V
V
CC=5V, I  
=0.3V, I  
/I =50mA/2.5mA  
=5V  
CC=50V, V  
=5V, I =50mA  
O
=100µA  
I(on)  
−
O
O
=20mA  
V
O(on)  
0.1  
−
0.3  
7.2  
0.5  
−
V
mA  
µA  
−
I
O I  
Output voltage  
Input current  
II  
V
V
V
I
I
O(off)  
−
I
=0V  
Output current  
DC current gain  
Input resistance  
Resistance ratio  
G
I
33  
−
O
O
R
1
0.7  
0.8  
−
1
1.3  
1.2  
−
kΩ  
−
−
−
R2  
/R  
1
1
fT  
∗
200  
MHz  
V
CE=10V, I = −50mA, f=100MHz  
E
Transition frequency  
Characteristics of built-in transistor  
∗
Rev.O 1/3  
123

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