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S-LDTC144TET3G

更新时间： 2025-07-27 01:16:47
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
3页 327K
描述
Bias Resistor Transistor

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中文翻译

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S-LDTC144TET3G 数据手册

 浏览型号S-LDTC144TET3G的Datasheet PDF文件第2页浏览型号S-LDTC144TET3G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTC144TET1G  
S-LDTC144TET1G  
Applications  
•
Inverter, Interface, Driver  
• Features  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
SC-89  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
•
•
We declare that the material of product compliance with  
RoHS requirements.  
S- Prefix for Automotive and Other Applications Requiring Unique Site  
3
R1  
COLLECTOR  
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  
1
BASE  
zAbsolute maximum ratings (Ta=25°C)  
2
Limits  
Unit  
V
Parameter  
Symbol  
EMITTER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
50  
50  
5
V
I
C
100  
mA  
mW  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
Pc  
Tj  
200  
150  
Tstg  
−55 to +150  
°C  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
LDTC144TET1G  
S-LDTC144TET1G  
H5  
47  
-
3000/Tape & Reel  
10000/Tape & Reel  
LDTC144TET3G  
S-LDTC144TET3G  
H5  
47  
-
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max. Unit  
Conditions  
Collector-base breakdown voltage  
BVCBO  
50  
50  
5
−
−
−
−
−
−
−
−
−
0.5  
0.5  
0.3  
V
V
I
I
I
C
=
10µA  
2.0mA  
50µA  
Collector-emitter breakdown voltage BVCEO  
C
=
Emitter-base breakdown voltage  
Collector cutoff current  
BVEBO  
V
E
=
I
CBO  
−
−
−
µA  
µA  
V
VCB  
=
50V  
Emitter cutoff current  
IEBO  
V
EB  
=4V  
Collector-emitter saturation voltage  
DC current transfer ratio  
Input resistance  
VCE(sat)  
IC/I  
B=5mA/0.5mA  
hFE  
100 250 600  
−
kΩ  
MHz  
V
CE  
=
5V, I  
C
=
1mA  
R
1
32.9  
47  
61.1  
−
Transition frequency  
Characteristics of built-in transistor  
f
T
∗
−
250  
−
VCE=10V, I = −5mA, f=100MHz  
E
Rev.O 1/3  
123

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