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S-AU81 PDF预览

S-AU81

更新时间: 2024-11-17 22:05:59
品牌 Logo 应用领域
东芝 - TOSHIBA 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
8页 184K
描述
RF Power Amplifier Module

S-AU81 技术参数

生命周期:Obsolete包装说明:DILCC6,.25,67
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N安装特点:SURFACE MOUNT
功能数量:1端子数量:6
最高工作温度:60 °C最低工作温度:-20 °C
封装主体材料:CERAMIC封装等效代码:DILCC6,.25,67
电源:3.6 V射频/微波设备类型:NARROW BAND MEDIUM POWER
子类别:RF/Microwave Amplifiers表面贴装:YES
Base Number Matches:1

S-AU81 数据手册

 浏览型号S-AU81的Datasheet PDF文件第2页浏览型号S-AU81的Datasheet PDF文件第3页浏览型号S-AU81的Datasheet PDF文件第4页浏览型号S-AU81的Datasheet PDF文件第5页浏览型号S-AU81的Datasheet PDF文件第6页浏览型号S-AU81的Datasheet PDF文件第7页 
                                                        
                                                        
S-AU81  
RF Power Amplifier Module  
S-AU81  
Power Amplifier Modules for Domestic  
Unit: mm  
cdmaOne  
·
GaAs HBT Micro PA (on-chip bias circuit and  
matching circuit)  
Output power: P = 27.0dBmW (min)  
·
·
·
o
Gain: G = 28.0dB (typ.)  
p
Total current: I (1) = 385 mA (typ.)  
t
(@P  
out  
= 27.0dBmW)  
·
Low-voltage operation: Operation at V  
= 1.5 V is  
CC  
possible  
I (2) = 97 mA (typ) (@P  
= 14dBmW, V = 1.5 V)  
CC  
t
out  
·
This device features an output control pin which  
can be switched between low-power and high-power  
settings.  
I = 90 mA (typ.) (@P  
t out  
= 14dBmW, V = 2.70 V)  
CC  
JEDEC  
JEITA  
TOSHIBA  
Weight: 0.0 g (typ.)  
5-6A  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Supply voltage 1  
Supply voltage 2  
Control voltage  
Collector current  
V
V
5
V
V
CC1  
CC2  
5
V
4
V
con  
I
1
A
CC  
Power dissipation  
P
(Note 1)  
2
W
°C  
°C  
D
Operating temperature  
Storage temperature range  
T
-20~+60  
-30~+125  
op  
T
stg  
Note 1: Ta = 25°C  
Marking  
Pin No.1  
Abbreviated product no.  
U81  
Monthly lot number  
2001-11-06  
1

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