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S-AU27AH

更新时间： 2024-11-17 22:22:27
品牌 Logo 应用领域
东芝 - TOSHIBA 射频和微波射频放大器微波放大器功率放大器高功率电源
页数 文件大小 规格书
3页 139K
描述
25W FM RF POWER AMPLIFIER MODULE

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中文翻译

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S-AU27AH 技术参数

生命周期：Obsolete包装说明：FLNG,2.4"H.SPACE
Reach Compliance Code：unknown风险等级：5.84
Is Samacsys：N特性阻抗：50 Ω
构造：MODULE最大输入功率 (CW)：27.78 dBm
最大工作频率：512 MHz最小工作频率：490 MHz
最高工作温度：100 °C最低工作温度：-30 °C
封装主体材料：PLASTIC/EPOXY封装等效代码：FLNG,2.4"H.SPACE
电源：15 V射频/微波设备类型：NARROW BAND HIGH POWER
子类别：RF/Microwave Amplifiers技术：HYBRID
最大电压驻波比：20Base Number Matches：1

S-AU27AH 数据手册

 浏览型号S-AU27AH的Datasheet PDF文件第2页浏览型号S-AU27AH的Datasheet PDF文件第3页 
S−AU27AL,S−AU27AM,S−AU27AH  
TOSHIBA RF POWER AMPLIFIER MODULE  
S−AU27AL,S−AU27AM,S−AU27AH  
25W FM RF POWER AMPLIFIER MODULE  
Unit in mm  
l S-AU27AL  
l S-AU27AM  
l S-AU27AH  
: f = 400~430MHz  
: f = 450~490MHz  
: f = 490~512MHz  
MAXIMUM RATINGS (Tc = 25°C)  
CHARACTERISTIC  
SYMBOL  
RATING  
UNIT  
DC Supply Voltage  
V
V
V
16  
17  
V
V
CC1  
CC2  
CC3  
DC Supply Voltage  
DC Supply Voltage  
Total current  
17  
V
I
10  
A
T
Input Power  
P
600  
mW  
W
°C  
°C  
i
Output Power  
P
40  
o
Operating Case Temperature Range  
Storage Temperature Range  
T
−30~100  
−40~110  
c (opr)  
JEDEC  
EIAJ  
—
—
T
stg  
TOSHIBA  
5−53Q  
Weight: 35g  
ELECTRICAL CHARACTERISTICS (Tc = 25°C)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX. UNIT  
Frequency Range  
f
―
400  
32  
—
—
512  
—
MHz  
W
range  
Po  
Output Power  
Power Gain  
Total Efficiency  
Input VSWR  
Harmonics  
G
22.0  
—
—
dB  
%
p
T
V
= V  
= V  
= 12.5V  
CC3  
CC1  
CC2  
Pi = 200mW  
= Z = 50Ω  
η
35  
—
—
—
—
Z
G
L
VSWRin  
HRM  
1.5  
−30  
2.5  
−25  
—
dB  
Po = 35W (V  
= adjust)  
CC1  
V
= V  
= 15V  
CC3  
CC2  
Load Mismatch  
Stability  
—
—
No Degradation  
―
―
Pi = 200mW  
VSWR load 20: 1 all phase  
V
V
= V  
= 12.5V  
CC3  
CC2  
All spurious output than  
60dB below desired  
signal  
= 3~12.5V  
CC1  
Pi = 200mW  
VSWR load 3: 1 all phase  
000707EAA2  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general  
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the  
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and  
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or  
damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the  
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling  
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..  
2001-02-02 1/3  
123

中文翻译

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 		RF/Microwave Amplifier, 360 MHz - 380 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
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 		RF/Microwave Amplifier, 898 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
S-AU40 TOSHIBA

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 		RF/Microwave Amplifier, 872 MHz - 905 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER

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