5秒后页面跳转
RZ1125V PDF预览

RZ1125V

更新时间: 2024-10-14 13:13:07
品牌 Logo 应用领域
三垦 - SANKEN 二极管
页数 文件大小 规格书
2页 23K
描述
Zener Diode, 125V V(Z), 8%, Silicon, Unidirectional

RZ1125V 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
其他特性:UL FLAMMABILITY外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN THYRISTOR二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-PALF-W2
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
认证状态:Not Qualified标称参考电压:125 V
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
最大电压容差:8%Base Number Matches:1

RZ1125V 数据手册

 浏览型号RZ1125V的Datasheet PDF文件第2页 
Avalanche Diodes with built-in Thyristor  
Electrical Characteristics (Ta =25°C)  
Absolute Maximum Ratings  
Others  
Mass  
Parameter  
ITSM  
(A)  
50Hz  
Half-cycle Sinewave  
Single Shot  
Tj  
(°C)  
Tstg  
(°C)  
VZ  
(V)  
IR  
(µA)  
IR  
(H)  
V
(V)  
RDC  
(typ.)  
(µA)  
Fig.  
Type No.  
VR =VRM  
max  
VR =VRM  
(–10ºC)  
(g)  
Ta  
=
100°C max  
27 to 33  
34 to 40  
50 to 60  
60 to 70  
90 to 110  
115 to 135  
140 to 160  
165 to 185  
185 to 215  
140 to 160  
0.03  
0.05  
0.07  
RZ1030  
RZ1040  
RZ1055  
RZ1065  
RZ1100  
RZ1125  
RZ1150  
RZ1175  
RZ1200  
EZ0150  
20  
28  
40  
50  
*
*
*
A
B
0.44  
80  
–10 to +125  
–40 to +150  
30  
10  
50  
105  
125  
150  
180  
125  
0.18  
0.22  
0.30  
0.18  
0.2  
Under development  
*
RZ1030  
RZ1040  
VR(DC) Temperature characteristic  
V
Z
Temperature dependence  
VR(DC) Temperature characteristic  
V
Z
Temperature dependence  
22  
50  
45  
40  
35  
30  
29  
28  
55  
50  
45  
21  
20  
max  
min  
36  
30  
max  
40  
38  
31.9  
30  
19  
18  
27  
26  
35  
min  
VRDC Temperature characteristic  
25.9  
25  
30  
28  
VRDC Temperature characteristic  
22  
20  
25  
–10  
0
25  
50  
75  
100  
125  
–10  
0
25  
50  
75  
100  
125  
–10  
0
25  
50  
75  
100  
125  
–10  
0
25  
50  
75  
100  
125  
Ambient Temperature Ta (°C)  
Ambient Temperature Ta (°C)  
Ambient Temperature Ta (°C)  
Ambient Temperature Ta (°C)  
RZ1055  
RZ1065  
VR(DC) Temperature characteristic  
V
Z
Temperature dependence  
45  
70  
65  
67  
57  
max  
60  
57.6  
55  
40  
min  
50  
47.6  
VRDC Temperature characteristic  
45  
35  
40  
–10  
0
25  
50  
75  
100  
125  
–10  
0
25  
50  
75  
100  
125  
Ambient Temperature Ta (°C)  
Ambient Temperature Ta (°C)  
RZ1100  
RZ1125  
Equivalent circuit diagram  
External Dimensions  
Fig.  
A
Fig.  
B
(Unit: mm)  
0.78±0.05  
0.6 ±0.05  
Flammability:  
UL94V-0 or Equivalent  
Cathode Mark  
Cathode Mark  
2.7 ±0.2  
4.0±0.2  
110  

与RZ1125V相关器件

型号 品牌 获取价格 描述 数据表
RZ1125V1 SANKEN

获取价格

Zener Diode, 125V V(Z), 8%, Silicon, Unidirectional
RZ1125V3 SANKEN

获取价格

Zener Diode, 125V V(Z), 8%, Silicon, Unidirectional
RZ1125VO SANKEN

获取价格

Zener Diode, 125V V(Z), 8%, Silicon, Unidirectional
RZ1125W SANKEN

获取价格

Zener Diode, 125V V(Z), 8%, Silicon, Unidirectional
RZ1125WK SANKEN

获取价格

Zener Diode, 125V V(Z), 8%, Silicon, Unidirectional
RZ1125WS SANKEN

获取价格

暂无描述
RZ1150 SANKEN

获取价格

Avalanche Diodes with built-in Thyristor
RZ1150V SANKEN

获取价格

Zener Diode, 150V V(Z), 6.7%, Silicon, Unidirectional
RZ1150V1 SANKEN

获取价格

Zener Diode, 150V V(Z), 6.7%, Silicon, Unidirectional
RZ1150V4 SANKEN

获取价格

Zener Diode, 150V V(Z), 6.7%, Silicon, Unidirectional