Datasheet > RYM002N05

RYM002N05

更新时间： 2024-01-31 13:27:09

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	316K
描述
0.9V Drive Nch MOSFET

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中文翻译

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数据手册

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RYM002N05 数据手册

0.9V Drive Nch MOSFET

RYM002N05

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

VMT3

Features

1) High speed switing.

2) Small package(VMT3).

3) Ultra low voltage drive(0.9V drive).

Abbreviated symbol : QJ

 Application

Switching

 Packaging specifications

 Inner circuit

(3)

Package

Taping

T2L

Type

Code

Basic ordering unit (pieces)

8000



RYM002N05

 Absolute maximum ratings (Ta = 25C)

Parameter

(1) Gate

(1)

(2)

(2) Source

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

(3) Drain

Drain-source voltage

Gate-source voltage

8

Continuous

200

800

125

C

Drain current

Pulsed

I_DP

Continuous

Pulsed

I_S

Source current

(Body Diode)

I_SP

800

Power dissipation

P_D

150

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to +150

C

*2 Each terminal mounted on a recommended land.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

833

Unit

Channel to Ambient

C / W

* Each terminal mounted on a recommended land.

www.rohm.com

2010.07 - Rev.A

1/5

12 3 4 5 6

中文翻译

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