Datasheet > RYC002N05

RYC002N05

更新时间： 2024-11-19 12:03:47

品牌	Logo	应用领域
TYSEMI		驱动
页数	文件大小	规格书
2页	1311K
描述
0.9V Drive Nch MOSFET High speed switing. Small package(SST3).

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RYC002N05 数据手册

Product specification

RYC002N05

0.9V Drive Nch MOSFET

 Structure

 Dimensions (Unit : mm)

SST3

<SOT-23>

Silicon N-channel MOSFET

Features

1) High speed switing.

2) Small package(SST3).

3)Ultra low voltage drive(0.9V drive).

Abbreviated symbol : QJ

 Application

Switching

 Packaging specifications

 Inner circuit

(3)

Package

Taping

T316

3000



Type

Code

Basic ordering unit (pieces)

∗1

RYC002N05

∗2

 Absolute maximum ratings (Ta = 25C)

Parameter Symbol

Drain-source voltage

(2)

(1)

(1) Source

(2) Gate

(3) Drain

Limits

Unit

∗1 BODY DIODE

∗2 ESD PROTECTION DIODE

V_DSS

V_GSS

I_D

Gate-source voltage

8

Continuous

Pulsed

200

800

150

C

Drain current

I_DP

Continuous

Pulsed

I_S

Source current

(Body Diode)

I_SP

800

Power dissipation

P_D

200

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to 150

C

*2 Each terminal mounted on a recommended land.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

625

Unit

Channel to Ambient

C / W

* Each terminal mounted on a recommended land.

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