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RUSH105 PDF预览

RUSH105

更新时间: 2024-11-25 03:35:35
品牌 Logo 应用领域
EDI 整流二极管快速恢复二极管
页数 文件大小 规格书
2页 42K
描述
50ns ULTRA-FAST RECOVERY HIGH -VOLTAGE RECTIFIER DIODES

RUSH105 技术参数

生命周期:Contact Manufacturer包装说明:O-XALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.76
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):15 VJESD-30 代码:O-XALF-W2
最大非重复峰值正向电流:8 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:5000 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

RUSH105 数据手册

 浏览型号RUSH105的Datasheet PDF文件第2页 
RUSH  
50ns ULTRA-FAST RECOVERY  
HIGH -VOLTAGE RECTIFIER DIODES  
PRV to 5,000 Volts  
50ns ultra-fast recovery  
Small size  
Exceptionally low leakage  
High surge capability  
Avalanche characteristics  
PRV  
3000  
4000  
5000  
EDI type  
RUSH103  
RUSH104  
RUSH105  
o
ELECTRICAL CHARACTERISTICS (at T  
=25 C Unless Otherwise Specified)  
A
o
(Fig.1)  
C, I  
Average Rectified Forward Current @ 50  
O
200 mA  
Max. Peak Surge Current, I  
(8.3ms)  
8 Amp  
FSM  
50ns  
Max. Reverse Recovery, T , Fig.4  
rr  
15 Volts  
A, V  
Max. Forward Voltage Drop @ 200 m  
F
o
1
A
Max. DC Reverse Current @ PRV and 25 C, I  
R
o
A
C, I  
Max. DC Reverse Current @ PRV and100  
25  
R
o
-55 to +150 C  
Ambient Operating Temperature Range, T  
A
o
Storage Temperature Range, T  
-55 to +150 C  
STG  
NOTES:  
1.It is recommended that a proper heat sink be used on the terminals of this device between the body and  
soldering point to prevent damage from excess heat.  
2.If operated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated.  
EDI reserves the right to change these specifications at any time without notice.  

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