Datasheet > RUS1H20R

RUS1H20R

更新时间： 2024-11-21 12:46:55

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		肖特基二极管
页数	文件大小	规格书
5页	171K
描述
Power Schottky Barrier Diode

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中文翻译

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RUS1H20R 数据手册

RUS1H20R

Power Schottky Barrier Diode

Features

Pin Description

• V_RRM

100V

I_F(AV)=2x 10A

• Low Power Loss and High Efficiency

• High Surge Capability

• Low Leakage Current

• Low Forward Voltage Drop

• Lead Free and Green Devices Available

TO-220

Applications

• Rectifiers in SMPS

• Free Wheeling Diode

• DC-DC Converters

Schottky Barrier Diode

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

100

V_RRM

V_R

Maximum Repetitive Reverse Voltage

Maximum DC Reverse Voltage

per Device

Average Rectified Forward Current,

T_C=130°C

I_F(AV)

per Diode

150

I_FSM

Peak Forward Surge Current,8.3mS Half Sine Wave

Storage Temperature Range

°C

T_STG

-55 to 150

150

T_J

Operating Junction Temperature

°C

Mounted on Large Heat Sink

R_qJC

Thermal Resistance-Junction to Case per Diode

°C/W

1.5

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. A– JUL., 2012

www.ruichips.com

12 3 4 5

中文翻译

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