Datasheet > RUH85100M-C

RUH85100M-C

更新时间： 2024-04-09 19:00:50

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
7页	230K
描述
DFN5060

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数据手册

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RUH85100M-C 数据手册

RUH85100M-C

N-Channel Advanced Power MOSFET

Features

Pin Description

• 85V/100A,

R_{DS (ON)}=6.5mΩ(Typ.)@V_GS=10V

R_{DS (ON)}=9.5mΩ(Typ.)@V_GS=4.5V

• Ultra Low On-Resistance

• Fast Switching Speed

• 100% Avalanche Tested

• Uses Ruichips advanced RUISGT^TMtechnology

• Lead Free and Green Devices (RoHS Compliant)

PIN1

DFN5060

Applications

• Synchronous Rectification for Flyback Converters

• PD Adaptors

• Charger for Mobile

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

±20

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

150

°C

T_STG

I_S

-55 to 150

100

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

400

100

I_DP

Continuous Drain Current@T_C(V_GS=10V)

②

I_D

③

Continuous Drain Current@T_A(V_GS=10V)

192

Maximum Power Dissipation@T_C

P_D

2.2

1.4

③

Maximum Power Dissipation@T_A

Shenzhen City Ruichips Semiconductor Co., Ltd

Rev. A– MAY., 2023

www.ruichips.com

12 3 4 5 6 7

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