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RUH60120S PDF预览

RUH60120S

更新时间: 2024-10-16 17:01:11
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锐骏半导体 - RUICHIPS /
页数 文件大小 规格书
6页 312K
描述
TO263

RUH60120S 数据手册

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RUH60120S  
N-Channel Advanced Power MOSFET  
Features  
Pin Description  
• 60V/120A,  
RDS (ON) =3.2m(Typ.)@VGS=10V  
D
RDS (ON) =3.6m(Typ.)@VGS=4.5V  
• Uses Ruichips Advanced RUISGTTM Technology  
• Ultra Low On-Resistance  
• Excellent QgxRDS(on) Product  
• 100% Avalanche Tested  
• 175°C Operating Temperature  
• Lead Free and Green Devices (RoHS Compliant)  
G
S
TO263  
D
Applications  
• Motor Drives  
• Uninterruptible Power Supplies  
• DC/DC Converter  
G
• General Purpose Applications  
S
N-Channel MOSFET  
Absolute Maximum Ratings  
Parameter  
Symbol  
Rating  
Unit  
Common Ratings (TC=25°C Unless Otherwise Noted)  
VDSS  
VGSS  
TJ  
Drain-Source Voltage  
60  
±20  
V
Gate-Source Voltage  
Maximum Junction Temperature  
Storage Temperature Range  
Diode Continuous Forward Current  
175  
°C  
°C  
A
TSTG  
IS  
-55 to 175  
120  
TC=25°C  
Mounted on Large Heat Sink  
300μs Pulse Drain Current Tested  
TC=25°C  
TC=25°C  
TC=100°C  
TC=25°C  
TC=100°C  
480  
120  
85  
A
A
IDP  
Continuous Drain Current(VGS=10V)  
Maximum Power Dissipation  
ID  
215  
107  
0.7  
58  
PD  
W
Thermal Resistance-Junction to Case  
Thermal Resistance-Junction to Ambient  
RJC  
RJA  
°C/W  
°C/W  
Drain-Source Avalanche Ratings  
EAS  
Avalanche Energy, Single Pulsed  
441  
mJ  
Shenzhen City Ruichips Semiconductor Co., Ltd  
Rev. A– NOV., 2023  
1
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