RUH60120S
N-Channel Advanced Power MOSFET
Features
Pin Description
• 60V/120A,
RDS (ON) =3.2mΩ(Typ.)@VGS=10V
D
RDS (ON) =3.6mΩ(Typ.)@VGS=4.5V
• Uses Ruichips Advanced RUISGTTM Technology
• Ultra Low On-Resistance
• Excellent QgxRDS(on) Product
• 100% Avalanche Tested
• 175°C Operating Temperature
• Lead Free and Green Devices (RoHS Compliant)
G
S
TO263
D
Applications
• Motor Drives
• Uninterruptible Power Supplies
• DC/DC Converter
G
• General Purpose Applications
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
60
±20
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
TSTG
IS
-55 to 175
120
TC=25°C
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
480
120
85
A
A
IDP
②
Continuous Drain Current(VGS=10V)
Maximum Power Dissipation
ID
215
107
0.7
58
PD
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
RJC
RJA
°C/W
°C/W
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
441
mJ
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2023
1
www.ruichips.com