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RUH40D80M PDF预览

RUH40D80M

更新时间: 2024-10-16 17:01:03
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锐骏半导体 - RUICHIPS /
页数 文件大小 规格书
7页 240K
描述
DFN5060

RUH40D80M 数据手册

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RUH40D80M  
Dual N-Channel Advanced Power MOSFET  
Features  
Pin Description  
• 40V/80A,  
RDS (ON) =4.2m(Typ.)@VGS=10V  
D2  
D2  
D1  
D1  
RDS (ON) =5.2m(Typ.)@VGS=4.5V  
• Uses Ruichips Advanced RUISGTTM Technology  
• Low Gate Charge Minimizing Switching Loss  
• Ultra Low On-Resistance  
G2  
S2  
G1  
S1  
• Excellent QgxRDS(on) product(FOM)  
• 100% Avalanche Tested  
PIN1  
• Lead Free and Green Devices (RoHS Compliant)  
DFN5060  
D1  
D2  
S2  
Applications  
• DC/DC Converters  
• On Board Power for Server  
• Synchronous Rectification  
G1  
G2  
S1  
Dual N-Channel MOSFET  
Absolute Maximum Ratings  
Parameter  
Symbol  
Rating  
Unit  
Common Ratings (TC=25°C Unless Otherwise Noted)  
VDSS  
VGSS  
TJ  
Drain-Source Voltage  
40  
±20  
V
Gate-Source Voltage  
Maximum Junction Temperature  
Storage Temperature Range  
Diode Continuous Forward Current  
150  
°C  
°C  
A
TSTG  
IS  
-55 to 150  
80  
TC=25°C  
Mounted on Large Heat Sink  
300μs Pulse Drain Current Tested  
TC=25°C  
TC=25°C  
TC=100°C  
TA=25°C  
TA=70°C  
TC=25°C  
TC=100°C  
TA=25°C  
TA=70°C  
240  
80  
A
A
IDP  
Continuous Drain Current@TC(VGS=10V)  
50  
ID  
18  
Continuous Drain Current@TA(VGS=10V)  
14  
52  
Maximum Power Dissipation@TC  
20  
PD  
W
3.2  
2.1  
Maximum Power Dissipation@TA  
Shenzhen City Ruichips Semiconductor Co., Ltd  
Rev. A– Aug., 2023  
1
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