RUH40D80M
Dual N-Channel Advanced Power MOSFET
Features
Pin Description
• 40V/80A,
RDS (ON) =4.2mΩ(Typ.)@VGS=10V
D2
D2
D1
D1
RDS (ON) =5.2mΩ(Typ.)@VGS=4.5V
• Uses Ruichips Advanced RUISGTTM Technology
• Low Gate Charge Minimizing Switching Loss
• Ultra Low On-Resistance
G2
S2
G1
S1
• Excellent QgxRDS(on) product(FOM)
• 100% Avalanche Tested
PIN1
• Lead Free and Green Devices (RoHS Compliant)
DFN5060
D1
D2
S2
Applications
• DC/DC Converters
• On Board Power for Server
• Synchronous Rectification
G1
G2
S1
Dual N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
40
±20
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
150
°C
°C
A
TSTG
IS
-55 to 150
80
TC=25°C
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
TC=25°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
240
80
A
A
IDP
Continuous Drain Current@TC(VGS=10V)
50
②
ID
18
③
Continuous Drain Current@TA(VGS=10V)
14
52
Maximum Power Dissipation@TC
20
PD
W
3.2
2.1
③
Maximum Power Dissipation@TA
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– Aug., 2023
1
www.ruichips.com