Datasheet > RUE003N02

RUE003N02

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1050K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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RUE003N02 数据手册

SMD Type

MOSFET

N-Channel MOSFET

RUE003N02

SOT-523

Unit: m m

1.6 ⁺_-⁰₀^._.¹₁

1.0 ⁺_-⁰₀^._.¹₁

0.2_-⁺⁰₀^._.⁰₀⁵₅

0.15±0.05

■ Features

● VDS (V) = 20V

Drain

● ID = 0.3 A

● R^DS(ON)＜ 1Ω (VGS = 4V)

● R^DS(ON)＜ 1.2Ω (VGS = 2.5V)

● R^DS(ON)＜ 1.4Ω (VGS = 1.8V)

● Fast switching speed.

BODY

DIODE

0.3±0.05

Gate

+0.1

-0.1

0.5

1. Gate

ESD PROTECTION

DIODE

Source

2. Source

3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

±8

Continuous Drain Current

300

Pulsed Drain Current

Power Dissipation

(Note.1)

600

150

Thermal Resistance.Junction- to-Ambient

Junction Temperature

thJA

833

℃/W

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage

DSS

=1 mA, V^GS=0V

DS=20V, VGS=0V

DS=0V, VGS=±8V

DSS

GSS

±10

GS(th)

DS=10V , I

GS=4 V, I

D=1 mA

0.3

D=0.3A

Static Drain-Source On-Resistance

RDS(O

GS=2.5 V, I

GS=1.8 V, I

=0.3A

1.2

1.4

Forward Transconductance

Input Capacitance

iss

oss

rss

d(on)

^DS=10V, I

D=0.3A

400

^GS=0V, V^DS=10V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On DelayTime

Turn-On Rise Time

GS=4V, VDS=10V, RL=67Ω,RG=10Ω

D=150mA

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Diode Forward Voltage

=0.1A,VGS=0V

1.2

■ Marking

Marking

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