Datasheet > RU80N15R

RU80N15R

更新时间： 2022-03-30 19:11:48

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
11页	495K
描述
N-Channel Advanced Power MOSFET

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RU80N15R 数据手册

RU80N15

N-Channel Advanced Power MOSFET

Features

Pin Description

· 150V/80A

RDS (ON)=31mW(Typ.) @ VGS=10V

·Avalanche Rated

TO-220

TO-263

TO-220F

TO-247

· Reliable and Rugged

· Lead Free and Green Devices Available

Applications

·Automotive applications and a wide

variety of other applications

·High Efficiency Synchronous in SMPS

·High Speed Power Switching

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (TA=25°C Unless Otherwise Noted)

150

±25

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

175

Maximum Junction Temperature

-55 to 175

T_STG

Storage Temperature Range

Diode Continuous Forward Current

TC=25°C

Mounted on Large Heat Sink

①

I_DP

TC=25°C

300

300ms Pulsed Drain Current Tested

②

TC=25°C

TC=100°C

TC=25°C

TC=100°C

I_D

Continue Drain Current

400

P_D

Maximum Power Dissipation

220

RqJC

RqJA

Thermal Resistance -Junction to Case

Thermal Resistance-Junction to Ambient

0.45

°C/W

62.5

Drain-Source Avalanche Ratings

EAS

Avalanche Energy ,Single Pulsed

1000

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C – JAN., 2010

www.ruichips.com

12 3 4 5 6 7...11

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