Datasheet > RU80100S

RU80100S

更新时间： 2024-04-09 19:00:57

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	325K
描述
TO-263

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数据手册

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RU80100S 数据手册

RU80100S

N-Channel Advanced Power MOSFET

Features

Pin Description

• 80V/100A,

R_{DS (ON)}=5.5mΩ (Typ.) @ V_GS=10V

• Ultra Low On-Resistance

• Exceptional dv/dt capability

• Fast Switching and Fully Avalanche Rated

• 100% avalanche tested

• 175°C Operating Temperature

• Lead Free and Green Available

TO263

Applications

• High Current Switching Applications

• Inverter Systems

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

±25

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

175

°C

T_STG

I_S

-55 to 175

100

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

400

100

I_DP

②

Continuous Drain Current(V_GS=10V)

Maximum Power Dissipation

I_D

188

P_D

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

R_θJC

R_θJA

0.8

°C/W

62.5

Drain-Source Avalanche Ratings

③

Avalanche Energy, Single Pulsed

225

E_AS

Ruichips Semiconductor Co., Ltd

Rev. A– DEC., 2013

www.ruichips.com

12 3 4 5 6 7 8

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