Datasheet > RU75N08L

RU75N08L

更新时间： 2024-09-14 17:00:55

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	292K
描述
TO-252

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中文翻译

获取价格

数据手册

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RU75N08L 数据手册

RU75N08L

N-Channel Advanced Power MOSFET

Features

Pin Description

• 75V/80A,

R_{DS (ON)}=8mΩ(Typ.)@V_GS=10V

• Ultra Low On-Resistance

• 100% avalanche tested

• Reliable and Rugged

• Lead Free and Green Devices Available (RoHS Compliant)

TO252

Applications

• High Speed Power Switching

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

±25

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

175

°C

T_STG

I_S

-55 to 175

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

320

I_DP

②

Continuous Drain Current(V_GS=10V)

Maximum Power Dissipation

I_D

158

P_D

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

R_JC

R_JA

0.95

100

°C/W

Drain-Source Avalanche Ratings

③

Avalanche Energy, Single Pulsed

361

E_AS

Ruichips Semiconductor Co., Ltd

Rev. A– MAR., 2016

www.ruichips.com

12 3 4 5 6 7 8

中文翻译

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