Datasheet > RU75210R

RU75210R

更新时间： 2024-09-14 17:01:27

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	447K
描述
TO-220

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中文翻译

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数据手册

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RU75210R 数据手册

RU75210R

N-Channel Advanced Power MOSFET

Features

Pin Description

• 75V/210A,

R_{DS (ON)}=3.5mΩ(Typ.)@V_GS=10V

• Reliable and Rugged

• 100% avalanche tested

• 175°C Operating Temperature

• Lead Free and Green Devices Available (RoHS Compliant)

Applications

TO220

• High Speed Power Switching

• High Efficiency Synchronous in SMPS

• Automotive applications and a wide variety of other applications

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

±25

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

175

°C

T_STG

I_S

-55 to 175

210

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

840

210

148

375

188

0.4

I_DP

②

Continuous Drain Current(V_GS=10V)

Maximum Power Dissipation

I_D

P_D

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

R_JC

R_JA

°C/W

62.5

Drain-Source Avalanche Ratings

③

E_AS

Avalanche Energy, Single Pulsed

900

Ruichips Semiconductor Co., Ltd

Rev. A– MAR., 2014

www.ruichips.com

12 3 4 5 6 7 8

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