Datasheet > RU6Z8R

RU6Z8R

更新时间： 2024-10-14 11:59:31

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		开关
页数	文件大小	规格书
9页	468K
描述
High efficiency switch mode power supplies

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中文翻译

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数据手册

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RU6Z8R 数据手册

RU6Z8R

N-Channel Advanced Power MOSFET

Features

Pin Description

• 650V/8A,

RDS (ON) =0.9Ω (Typ.)@VGS=10V

• Super High Dense Cell Design

• Fast Switching

• 100% avalanche tested

TO-220

• Lead Free and Green Devices Available

(RoHS Compliant)

Applications

• High efficiency switch mode power

supplies

• Lighting

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

650

±30

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

150

Maximum Junction Temperature

Storage Temperature Range

T_STG

-55 to 150

①

I_S

Diode Continuous Forward Current

T_C=25°C

Mounted on Large Heat Sink

②

I_DP

300μs Pulse Drain Current Tested

①

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

I_D

Continuous Drain Current(V_GS=10V)

5.2

147

P_D

Maximum Power Dissipation

0.85

R_θJC

Thermal Resistance-Junction to Case

°C/W

Drain-Source Avalanche Ratings

③

211

Avalanche Energy, Single Pulsed

E_AS

Rev. B– DEC., 2012

www.ruichips.com

12 3 4 5 6 7...9

中文翻译

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