Datasheet > RU6085H

RU6085H

更新时间： 2024-04-09 19:00:45

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	636K
描述
SOP-8

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RU6085H 数据手册

RU6085H

N-Channel Advanced Power MOSFET

Features

Pin Description

• 60V/80A,

R_{DS (ON)}=6mΩ(Typ.)@V_GS=10V

_{DS (ON)}=6.5mΩ(Typ.)@V_GS=4.5V

• Super High Dense Cell Design

• Ultra Low On-Resistance

• Fast Switching Speed

• Lead Free and Green Devices Available (RoHS Compliant)

SOP-8

Applications

• Power Management.

• Switch Applications.

• Load switch

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

±20

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

150

°C

T_STG

-55 to 150

I_S

Diode Continuous Forward Current

T_A=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

320

2.5

1.6

I_DP

②

Continuous Drain Current(V_GS=10V)

Maximum Power Dissipation

I_D

P_D

R_

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

°C/W

③

R_

Drain-Source Avalanche Ratings

④

Avalanche Energy, Single Pulsed

TBD

E_AS

Ruichips Semiconductor Co., Ltd

Rev. A– AUG., 2016

www.ruichips.com

12 3 4 5 6 7 8

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