RU6051K
N-Channel Advanced Power MOSFET
Features
Pin Description
• 60V/50A,
RDS (ON) =10mΩ(Typ.)@VGS=10V
RDS (ON) =12mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
G
D
S
TO251
D
S
Applications
• DC-DC Converters and Off-line UPS
G
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
60
±20
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
TSTG
IS
-55 to 175
50
TC=25°C
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
200
50
A
A
IDP
②
Continuous Drain Current(VGS=10V)
Maximum Power Dissipation
ID
36
71
PD
W
36
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
RJC
RJA
2.1
100
°C/W
°C/W
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
100
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2013
1
www.ruichips.com