Datasheet > RU5H11P

RU5H11P

更新时间： 2024-10-14 09:42:03

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
9页	368K
描述
N-Channel Advanced Power MOSFET

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RU5H11P 数据手册

RU5H11P

N-Channel Advanced Power MOSFET

Features

Pin Description

• 500V/11.5A,

DS (ON) =0.55W(Typ.) @ VGS=10V

• Gate Charge Minimized

• Low Crss

TO-220

TO-263

TO-220F

TO-247

• Extremely High dv/dt Capability

• 100% Avalanche Tested

• Lead Free and Green Available

Applications

• High efficiency SMPS

• Lighting

• Off-Line Adaptors

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

500

±30

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

T_STG

I_S

-55 to 150

11.5

T_C=25°C

Mounted on Large Heat Sink

①

I_DP

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

①

11.5

I_D

Continuous Drain Current(V_GS=10V)

①

8.1

P_D

Maximum Power Dissipation

3.6

R_qJC

Thermal Resistance-Junction to Case

°C/W

Drain-Source Avalanche Ratings

②

320

Avalanche Energy, Single Pulsed

E_AS

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. A – SEP., 2011

www.ruichips.com

12 3 4 5 6 7...9

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