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RU4095L PDF预览

RU4095L

更新时间: 2024-04-09 19:00:47
品牌 Logo 应用领域
锐骏半导体 - RUICHIPS /
页数 文件大小 规格书
9页 290K
描述
TO-252

RU4095L 数据手册

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RU4095L  
N-Channel Advanced Power MOSFET  
Features  
Pin Description  
• 40V/99A,  
R
DS (ON) =3.9mΩ(Typ.)@VGS=10V  
Super High Dense Cell Design  
• Ultra Low On-Resistance  
100% avalanche tested  
TO-252  
• Lead Free and Green Devices Available  
(RoHS Compliant)  
Applications  
• Motor Drivers  
• DC/DC Converters  
N-Channel MOSFET  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Unit  
Common Ratings (TC=25°C Unless Otherwise Noted)  
40  
±20  
VDSS  
VGSS  
TJ  
Drain-Source Voltage  
V
Gate-Source Voltage  
°C  
°C  
175  
Maximum Junction Temperature  
Storage Temperature Range  
TSTG  
-55 to 175  
99  
IS  
Diode Continuous Forward Current  
TC=25°C  
A
Mounted on Large Heat Sink  
390  
IDP  
300μs Pulse Drain Current Tested  
TC=25°C  
TC=25°C  
A
A
99  
ID  
Continuous Drain Current(VGS=10V)  
TC=100°C  
TC=25°C  
TC=100°C  
75  
107  
53.5  
1.4  
W
W
PD  
Maximum Power Dissipation  
RqJC  
Thermal Resistance-Junction to Case  
°C/W  
Drain-Source Avalanche Ratings  
400  
Avalanche Energy, Single Pulsed  
mJ  
EAS  
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– APR., 2012  
www.ruichips.com  

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