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RU40180R PDF预览

RU40180R

更新时间: 2024-09-26 17:00:55
品牌 Logo 应用领域
锐骏半导体 - RUICHIPS /
页数 文件大小 规格书
6页 368K
描述
TO-220

RU40180R 数据手册

 浏览型号RU40180R的Datasheet PDF文件第2页浏览型号RU40180R的Datasheet PDF文件第3页浏览型号RU40180R的Datasheet PDF文件第4页浏览型号RU40180R的Datasheet PDF文件第5页浏览型号RU40180R的Datasheet PDF文件第6页 
RU40180R  
N-Channel Advanced Power MOSFET  
Features  
Pin Description  
• 40V/180A,  
RDS (ON) =1.8m(Typ.)@VGS=10V  
• Uses Ruichips Proprietary New TrenchTM Technology  
• Ultra Low On-Resistance  
• Exceptional dv/dt capability  
• Fast Switching and Fully Avalanche Rated  
• 100% avalanche tested  
• Lead Free and Green Devices Available (RoHS Compliant)  
G
D
S
TO220  
D
Applications  
• High efficiency DC/DC Converters  
• Synchronous Rectification  
• UPS Inverter  
G
S
N-Channel MOSFET  
Absolute Maximum Ratings  
Parameter  
Symbol  
Rating  
Unit  
Common Ratings (TC=25°C Unless Otherwise Noted)  
VDSS  
VGSS  
TJ  
Drain-Source Voltage  
40  
±20  
V
Gate-Source Voltage  
Maximum Junction Temperature  
Storage Temperature Range  
Diode Continuous Forward Current  
175  
°C  
°C  
A
TSTG  
IS  
-55 to 175  
75  
TC=25°C  
Mounted on Large Heat Sink  
300μs Pulse Drain Current Tested  
TC=25°C  
TC=25°C  
TC=100°C  
TC=25°C  
TC=100°C  
720  
180  
127  
375  
188  
0.4  
A
A
IDP  
Continuous Drain Current(VGS=10V)  
Maximum Power Dissipation  
ID  
PD  
W
Thermal Resistance-Junction to Case  
Thermal Resistance-Junction to Ambient  
RJC  
RJA  
°C/W  
°C/W  
51  
Drain-Source Avalanche Ratings  
EAS  
Avalanche Energy, Single Pulsed  
1480  
mJ  
Shenzhen City Ruichips Semiconductor Co., Ltd  
Rev. A– NOV., 2022  
1
www.ruichips.com  

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