Datasheet > RU3415EB

RU3415EB

更新时间： 2024-04-09 19:01:57

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
10页	411K
描述
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数据手册

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RU3415EB 数据手册

RU40C40M

Complementary Advanced Power MOSFET

Features

Pin Description

• N-Channel

40V/40A,

R_{DS (ON)}=12mΩ(Typ.) @ V_GS=10V

R_{DS (ON)}=17mΩ(Typ.) @ V_GS=4.5V

• P-Channel

-40V/-40A,

R_{DS (ON)}=21mΩ (Typ.) @ V_GS=-10V

R_{DS (ON)}=30mΩ (Typ.) @ V_GS=-4.5V

• Fast Switching Speed

• ESD Protected

pin1

• Low gate Charge

• Lead Free and Green Devices Available (RoHS Compliant)

PDFN5060

Applications

• Load Switch

Complementary MOSFET

Absolute Maximum Ratings

Parameter

Symbol

N-Channel P-Channel

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

-40

±20

150

Gate-Source Voltage

±20

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

°C

T_STG

I_S

-55 to 150 -55 to 150

T_A=25°C

-20

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_A=25°C

T_A=100°C

T_A=25°C

T_A=100°C

160

-160

-40

-25

I_DP

②

Continuous Drain Current(V_GS=±10V)

Maximum Power Dissipation

I_D

P_D

R_JC

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

3.5

°C/W

③

R_JA

Drain-Source Avalanche Ratings

④

E_AS

Avalanche Energy, Single Pulsed

Shenzhen City Ruichips Semiconductor Co., Ltd

Rev. A– JAN., 2017

www.ruichips.com

12 3 4 5 6 7...10

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