Datasheet > RU3205R

RU3205R

更新时间： 2022-03-30 16:02:16

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
12页	451K
描述
N-Channel Advanced Power MOSFET

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数据手册

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RU3205R 数据手册

RU3205

N-Channel Advanced Power MOSFET

Features

Pin Description

• 60V/100A,

• RDS (ON) =7.5mΩ(max.)@VGS=10V I_DS=40A

• Ultra Low On-Resistance

TO-220

TO-263

TO-220F

TO-247

• Exceptional dv/dt capability

• Fast Switching and Fully Avalanche Rated

• 175°C Operating Temperature

• Lead Free and Green Devices Available

(RoHS Compliant)

Applications

• Switching Application Systems

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

±25

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

175

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

T_STG

I_S

-55 to 175

100

T_C=25°C

Mounted on Large Heat Sink

①

400

I_DP

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

I_D

Continuous Drain Current

275

P_D

Maximum Power Dissipation

200

0.55

R_qJC

Thermal Resistance-Junction to Case

°C/W

Drain-Source Avalanche Ratings

E_AS

1.2

Avalanche Energy, Single Pulsed

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. A – MAR., 2009

www.ruichips.com

12 3 4 5 6 7...12

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