Datasheet > RU30ZV

RU30ZV

更新时间： 2024-11-07 10:25:15

品牌	Logo	应用领域
三垦 - SANKEN		/
页数	文件大小	规格书
9页	172K
描述
Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,

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数据手册

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RU30ZV 数据手册

General-purpose Diodes

Rectifier Diodes

Surface-mount Type

■

(Ta =25ºC)

Electrical Characteristics

(Ta =25ºC)

Electrical Characteristics

Absolute Maximum Ratings

I_{F (AV)}I_FSM

V_F

(V)

I_R

(µA)

V_F

(V)

I_R

(µA)

Fig.

No.

Fig.

No.

V_RM

(V)

I_{F (AV)}I_FSM

Condition

Type No.

V_RM

(V)

Condition

Type No.

Tstg

(ºC)

Tstg

(ºC)

(A)

I_F

max

(A)

SFPM-52

-54

200

400

200

400

RM 4Y

100

200

400

600

800

1000

600

0.9

1.0

1.00

–40 to +150

200

1.0

0.95

SFPM-62

-64

3.0

3.2

3.0

3.5

0.98

–40 to +150

150

350

0.97

0.92

4AM

Axial Type

■

(Ta =25ºC)

Electrical Characteristics

Absolute Maximum Ratings

I_{F (AV)}I_FSM

V_F

(V)

I_R

(µA)

Fig.

No.

V_RM

(V)

Condition

Type No.

Tstg

(ºC)

Center-tap Type

■

(A)

(Ta =25ºC)

Electrical Characteristics

I_F

(A)

max

0.98

max

Absolute Maximum Ratings

Tj Tstg

(ºC)

AM01Z

200

400

600

200

400

600

100

200

400

600

800

1000

400

600

800

200

400

600

800

1000

600

800

1000

200

400

600

800

200

400

600

800

1000

200

400

600

800

1000

400

600

800

1000

V_F

(V)

I_R

(µA)

Fig.

No.

Condition

Type No.

V_RM

(V)

I_{F (AV)}I_FSM

1.0

–40 to +150

1.0

(A)

I_F

(A)

max. per

chip

max. per

chip

01A

EM01Z

FMM-22S,R

-24S,R

200

400

600

100

200

400

600

10.0

100

–40 to +150

1.1

5.0

1.0

1.2

0.97

0.92

-26S,R

01A

EM 1Y

FMM-31S,R

-32S,R

20.0

120

–40 to +150

1.1 10.0

-34S,R

–40 to +150

1.0

-36S,R

EM 2

–40 to +150

1.2

1.0

RM 1Z

1.0

0.8

0.95

1.20

0.92

RM 11A

11B

11C

RM 10Z

1.2

1.5

1.2

100

120

150

–40 to +150

1.5

0.91

10A

10B

RM 2Z

1.2

100

–40 to +150

1.5

RO 2Z

–40 to +150

0.92

0.95

1.5

2.5

RM 3

2.5

2.0

150

12 3 4 5 6 7...9

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