Datasheet > RU30P60L

RU30P60L

更新时间： 2024-11-07 17:02:15

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
6页	406K
描述
TO252

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中文翻译

获取价格

数据手册

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RU30P60L 数据手册

RU30P60L

P-Channel Advanced Power MOSFET

Features

Pin Description

• -30V/-60A,

R_{DS (ON)}=8mΩ(Typ.)@V_GS=-10V

R_{DS (ON)}=12mΩ(Typ.)@V_GS=-4.5V

• Uses Ruichips advanced Trench^TMtechnology

• Ultra Low On-Resistance

• Reliable and Rugged

• 100% avalanche tested

• Lead Free and Green Devices (RoHS Compliant)

TO252

Applications

• High-Efficiency DC-DC Converters

• Notebook PCs

• Mobile Devices

P-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

-30

±20

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

175

°C

T_STG

I_S

-55 to 175

-60

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

-240

-60

-42

150

I_DP

②

Continuous Drain Current(V_GS=-10V)

Maximum Power Dissipation

I_D

P_D

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

R_JC

R_JA

°C/W

Drain-Source Avalanche Ratings

③

E_AS

Avalanche Energy, Single Pulsed

462

Shenzhen City Ruichips Semiconductor Co., Ltd

Rev. A– DEC., 2022

www.ruichips.com

12 3 4 5 6

中文翻译

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