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RU30P60L PDF预览

RU30P60L

更新时间: 2024-09-16 17:02:15
品牌 Logo 应用领域
锐骏半导体 - RUICHIPS /
页数 文件大小 规格书
6页 406K
描述
TO252

RU30P60L 数据手册

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RU30P60L  
P-Channel Advanced Power MOSFET  
Features  
Pin Description  
• -30V/-60A,  
D
RDS (ON) =8m(Typ.)@VGS=-10V  
RDS (ON) =12m(Typ.)@VGS=-4.5V  
• Uses Ruichips advanced TrenchTM technology  
• Ultra Low On-Resistance  
• Reliable and Rugged  
• 100% avalanche tested  
• Lead Free and Green Devices (RoHS Compliant)  
G
S
TO252  
D
Applications  
• High-Efficiency DC-DC Converters  
• Notebook PCs  
• Mobile Devices  
G
S
P-Channel MOSFET  
Absolute Maximum Ratings  
Parameter  
Symbol  
Rating  
Unit  
Common Ratings (TC=25°C Unless Otherwise Noted)  
VDSS  
VGSS  
TJ  
Drain-Source Voltage  
-30  
±20  
V
Gate-Source Voltage  
Maximum Junction Temperature  
Storage Temperature Range  
Diode Continuous Forward Current  
175  
°C  
°C  
A
TSTG  
IS  
-55 to 175  
-60  
TC=25°C  
Mounted on Large Heat Sink  
300μs Pulse Drain Current Tested  
TC=25°C  
TC=25°C  
TC=100°C  
TC=25°C  
TC=100°C  
-240  
-60  
-42  
150  
75  
A
A
IDP  
Continuous Drain Current(VGS=-10V)  
Maximum Power Dissipation  
ID  
PD  
W
Thermal Resistance-Junction to Case  
Thermal Resistance-Junction to Ambient  
RJC  
RJA  
1
°C/W  
°C/W  
39  
Drain-Source Avalanche Ratings  
EAS  
Avalanche Energy, Single Pulsed  
462  
mJ  
Shenzhen City Ruichips Semiconductor Co., Ltd  
Rev. A– DEC., 2022  
1
www.ruichips.com  

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