Datasheet > RU30P4B

RU30P4B

更新时间： 2024-11-06 17:00:59

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	341K
描述
SOT23

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中文翻译

获取价格

数据手册

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RU30P4B 数据手册

RU30P4B

P-Channel Advanced Power MOSFET

Features

Pin Description

• -25V/-4A,

R_{DS (ON)}=50mΩ(Typ.)@V_GS=-10V

_{DS (ON)}=60mΩ(Typ.)@V_GS=-4.5V

R_{DS (ON)}=80mΩ(Typ.)@V_GS=-2.5V

• Low On-Resistance

• Super High Dense Cell Design

• Reliable and Rugged

• Lead Free and Green Devices Available (RoHS Compliant)

SOT23

Applications

• Load Switch

P-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

-25

±16

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

150

°C

T_STG

I_S

-55 to 150

-1.25

T_A=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

-16

-4

I_DP

②

Continuous Drain Current(V_GS=-10V)

Maximum Power Dissipation

I_D

-3.2

P_D

0.64

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

R_θJC

°C/W

③

125

R_θJA

Drain-Source Avalanche Ratings

④

Avalanche Energy, Single Pulsed

E_AS

Ruichips Semiconductor Co., Ltd

Rev. A– MAR., 2013

www.ruichips.com

12 3 4 5 6 7 8

中文翻译

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与RU30P4B相关器件

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